Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes
Збережено в:
| Дата: | 2019 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2019
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| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0001000431 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-18322 |
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open-sciencenbuvgovua-183222024-02-26T22:00:13Z Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes A. Latreche 1560-8034 2019 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0001000431 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics A. Latreche Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes |
| format |
Article |
| author |
A. Latreche |
| author_facet |
A. Latreche |
| author_sort |
A. Latreche |
| title |
Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes |
| title_short |
Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes |
| title_full |
Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes |
| title_fullStr |
Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes |
| title_full_unstemmed |
Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes |
| title_sort |
combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4h-sic schottky barrier diodes |
| publishDate |
2019 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0001000431 |
| work_keys_str_mv |
AT alatreche combinationofthermionicemissionandtunnelingmechanismstoanalyzetheleakagecurrentin4hsicschottkybarrierdiodes |
| first_indexed |
2024-03-30T07:35:07Z |
| last_indexed |
2024-03-30T07:35:07Z |
| _version_ |
1796879180442370048 |