Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes
Збережено в:
| Дата: | 2019 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2019
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| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0001000431 |
| Теги: |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859504904452702208 |
|---|---|
| author | A. Latreche |
| author_facet | A. Latreche |
| author_sort | A. Latreche |
| collection | Open-Science |
| first_indexed | 2025-07-17T13:20:40Z |
| format | Article |
| id | open-sciencenbuvgovua-18322 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T13:20:40Z |
| publishDate | 2019 |
| record_format | dspace |
| series | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spelling | open-sciencenbuvgovua-183222024-02-26T22:00:13Z Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes A. Latreche 1560-8034 2019 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0001000431 Article |
| spellingShingle | Semiconductor Physics, Quantum Electronics and Optoelectronics A. Latreche Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes |
| title | Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes |
| title_full | Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes |
| title_fullStr | Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes |
| title_full_unstemmed | Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes |
| title_short | Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes |
| title_sort | combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4h-sic schottky barrier diodes |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0001000431 |
| work_keys_str_mv | AT alatreche combinationofthermionicemissionandtunnelingmechanismstoanalyzetheleakagecurrentin4hsicschottkybarrierdiodes |