Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes

Gespeichert in:
Bibliographische Detailangaben
Datum:2019
1. Verfasser: A. Latreche
Format: Artikel
Sprache:English
Veröffentlicht: 2019
Schriftenreihe:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0001000431
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS
id open-sciencenbuvgovua-18322
record_format dspace
spelling open-sciencenbuvgovua-183222024-02-26T22:00:13Z Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes A. Latreche 1560-8034 2019 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0001000431 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
A. Latreche
Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes
format Article
author A. Latreche
author_facet A. Latreche
author_sort A. Latreche
title Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes
title_short Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes
title_full Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes
title_fullStr Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes
title_full_unstemmed Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes
title_sort combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4h-sic schottky barrier diodes
publishDate 2019
url http://jnas.nbuv.gov.ua/article/UJRN-0001000431
work_keys_str_mv AT alatreche combinationofthermionicemissionandtunnelingmechanismstoanalyzetheleakagecurrentin4hsicschottkybarrierdiodes
first_indexed 2025-07-17T13:20:40Z
last_indexed 2025-07-17T13:20:40Z
_version_ 1850412931073703937