Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes
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| Date: | 2019 |
|---|---|
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
2019
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| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0001000433 |
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| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859504903257325568 |
|---|---|
| author | P. M. Romanets R. V. Konakova M. S. Boltovets V. V. Basanets Ya. Ya. Kudryk V. S. Slipokurov |
| author_facet | P. M. Romanets R. V. Konakova M. S. Boltovets V. V. Basanets Ya. Ya. Kudryk V. S. Slipokurov |
| author_sort | P. M. Romanets |
| collection | Open-Science |
| first_indexed | 2025-07-17T13:20:41Z |
| format | Article |
| id | open-sciencenbuvgovua-18324 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T13:20:41Z |
| publishDate | 2019 |
| record_format | dspace |
| series | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spelling | open-sciencenbuvgovua-183242024-02-26T22:00:13Z Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes P. M. Romanets R. V. Konakova M. S. Boltovets V. V. Basanets Ya. Ya. Kudryk V. S. Slipokurov 1560-8034 2019 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0001000433 Article |
| spellingShingle | Semiconductor Physics, Quantum Electronics and Optoelectronics P. M. Romanets R. V. Konakova M. S. Boltovets V. V. Basanets Ya. Ya. Kudryk V. S. Slipokurov Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes |
| title | Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes |
| title_full | Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes |
| title_fullStr | Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes |
| title_full_unstemmed | Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes |
| title_short | Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes |
| title_sort | peculiarities of study of au–ti–pd–n+-n-n+-si multilayer contact structure to avalanche transit-time diodes |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0001000433 |
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