Features of the technology of formation of metal contacts to discrete IR and THz radiation detectors based on CdHgTe epitaxial layers
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| Datum: | 2019 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
2019
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| Schriftenreihe: | Reports of the National Academy of Sciences of Ukraine |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0001032435 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859506616724881408 |
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| author | Z. F. Tsybrii |
| author_facet | Z. F. Tsybrii |
| author_sort | Z. F. Tsybrii |
| collection | Open-Science |
| first_indexed | 2025-07-17T13:37:21Z |
| format | Article |
| id | open-sciencenbuvgovua-20178 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T13:37:21Z |
| publishDate | 2019 |
| record_format | dspace |
| series | Reports of the National Academy of Sciences of Ukraine |
| spelling | open-sciencenbuvgovua-201782024-02-26T22:06:35Z Features of the technology of formation of metal contacts to discrete IR and THz radiation detectors based on CdHgTe epitaxial layers Z. F. Tsybrii 1025-6415 2019 en Reports of the National Academy of Sciences of Ukraine http://jnas.nbuv.gov.ua/article/UJRN-0001032435 Article |
| spellingShingle | Reports of the National Academy of Sciences of Ukraine Z. F. Tsybrii Features of the technology of formation of metal contacts to discrete IR and THz radiation detectors based on CdHgTe epitaxial layers |
| title | Features of the technology of formation of metal contacts to discrete IR and THz radiation detectors based on CdHgTe epitaxial layers |
| title_full | Features of the technology of formation of metal contacts to discrete IR and THz radiation detectors based on CdHgTe epitaxial layers |
| title_fullStr | Features of the technology of formation of metal contacts to discrete IR and THz radiation detectors based on CdHgTe epitaxial layers |
| title_full_unstemmed | Features of the technology of formation of metal contacts to discrete IR and THz radiation detectors based on CdHgTe epitaxial layers |
| title_short | Features of the technology of formation of metal contacts to discrete IR and THz radiation detectors based on CdHgTe epitaxial layers |
| title_sort | features of the technology of formation of metal contacts to discrete ir and thz radiation detectors based on cdhgte epitaxial layers |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0001032435 |
| work_keys_str_mv | AT zftsybrii featuresofthetechnologyofformationofmetalcontactstodiscreteirandthzradiationdetectorsbasedoncdhgteepitaxiallayers |