Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes

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Бібліографічні деталі
Дата:2019
Автор: A. Latreche
Формат: Стаття
Мова:English
Опубліковано: 2019
Назва видання:Semiconductor Physics, Quantum Electronics and Optoelectronics
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0001073938
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Library portal of National Academy of Sciences of Ukraine | LibNAS
id open-sciencenbuvgovua-22770
record_format dspace
spelling open-sciencenbuvgovua-227702024-02-26T22:24:40Z Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes A. Latreche 1560-8034 2019 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0001073938 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
A. Latreche
Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
format Article
author A. Latreche
author_facet A. Latreche
author_sort A. Latreche
title Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
title_short Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
title_full Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
title_fullStr Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
title_full_unstemmed Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
title_sort conduction mechanisms of the reverse leakage current of β-ga2o3 schottky barrier diodes
publishDate 2019
url http://jnas.nbuv.gov.ua/article/UJRN-0001073938
work_keys_str_mv AT alatreche conductionmechanismsofthereverseleakagecurrentofbga2o3schottkybarrierdiodes
first_indexed 2024-03-30T07:55:32Z
last_indexed 2024-03-30T07:55:32Z
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