Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes

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Бібліографічні деталі
Дата:2019
Автор: A. Latreche
Формат: Стаття
Мова:Англійська
Опубліковано: 2019
Назва видання:Semiconductor Physics, Quantum Electronics and Optoelectronics
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0001073938
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author A. Latreche
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series Semiconductor Physics, Quantum Electronics and Optoelectronics
spelling open-sciencenbuvgovua-227702024-02-26T22:24:40Z Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes A. Latreche 1560-8034 2019 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0001073938 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
A. Latreche
Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
title Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
title_full Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
title_fullStr Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
title_full_unstemmed Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
title_short Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
title_sort conduction mechanisms of the reverse leakage current of β-ga2o3 schottky barrier diodes
url http://jnas.nbuv.gov.ua/article/UJRN-0001073938
work_keys_str_mv AT alatreche conductionmechanismsofthereverseleakagecurrentofbga2o3schottkybarrierdiodes