Relaxation of excess minority carrier distribution in macroporous silicon

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Datum:2018
Hauptverfasser: L. A. Karachevtseva, V. F. Onyshchenko
Format: Artikel
Sprache:Englisch
Veröffentlicht: 2018
Schriftenreihe:Chemistry, physics and technology of surface
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000888940
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author L. A. Karachevtseva
V. F. Onyshchenko
author_facet L. A. Karachevtseva
V. F. Onyshchenko
author_sort L. A. Karachevtseva
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institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
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publishDate 2018
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series Chemistry, physics and technology of surface
spelling open-sciencenbuvgovua-273122024-02-27T21:47:27Z Relaxation of excess minority carrier distribution in macroporous silicon L. A. Karachevtseva V. F. Onyshchenko 2079-1704 2018 en Chemistry, physics and technology of surface http://jnas.nbuv.gov.ua/article/UJRN-0000888940 Article
spellingShingle Chemistry, physics and technology of surface
L. A. Karachevtseva
V. F. Onyshchenko
Relaxation of excess minority carrier distribution in macroporous silicon
title Relaxation of excess minority carrier distribution in macroporous silicon
title_full Relaxation of excess minority carrier distribution in macroporous silicon
title_fullStr Relaxation of excess minority carrier distribution in macroporous silicon
title_full_unstemmed Relaxation of excess minority carrier distribution in macroporous silicon
title_short Relaxation of excess minority carrier distribution in macroporous silicon
title_sort relaxation of excess minority carrier distribution in macroporous silicon
url http://jnas.nbuv.gov.ua/article/UJRN-0000888940
work_keys_str_mv AT lakarachevtseva relaxationofexcessminoritycarrierdistributioninmacroporoussilicon
AT vfonyshchenko relaxationofexcessminoritycarrierdistributioninmacroporoussilicon