Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings
Збережено в:
| Дата: | 2018 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2018
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| Назва видання: | Reports of the National Academy of Sciences of Ukraine |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000898783 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
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open-sciencenbuvgovua-276842024-02-27T21:48:39Z Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings H. P. Haidar 1025-6415 2018 en Reports of the National Academy of Sciences of Ukraine http://jnas.nbuv.gov.ua/article/UJRN-0000898783 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Reports of the National Academy of Sciences of Ukraine |
| spellingShingle |
Reports of the National Academy of Sciences of Ukraine H. P. Haidar Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings |
| format |
Article |
| author |
H. P. Haidar |
| author_facet |
H. P. Haidar |
| author_sort |
H. P. Haidar |
| title |
Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings |
| title_short |
Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings |
| title_full |
Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings |
| title_fullStr |
Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings |
| title_full_unstemmed |
Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings |
| title_sort |
variations in electrophysical properties of heavily doped single crystals of n-ge<as> under the effect of thermal annealings |
| publishDate |
2018 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000898783 |
| work_keys_str_mv |
AT hphaidar variationsinelectrophysicalpropertiesofheavilydopedsinglecrystalsofngeltasgtundertheeffectofthermalannealings |
| first_indexed |
2024-03-30T08:18:12Z |
| last_indexed |
2024-03-30T08:18:12Z |
| _version_ |
1796880158797332480 |