Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings
Збережено в:
| Дата: | 2018 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2018
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| Назва видання: | Reports of the National Academy of Sciences of Ukraine |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000898783 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859507931862532096 |
|---|---|
| author | H. P. Haidar |
| author_facet | H. P. Haidar |
| author_sort | H. P. Haidar |
| collection | Open-Science |
| first_indexed | 2025-07-17T15:03:16Z |
| format | Article |
| id | open-sciencenbuvgovua-27684 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T15:03:16Z |
| publishDate | 2018 |
| record_format | dspace |
| series | Reports of the National Academy of Sciences of Ukraine |
| spelling | open-sciencenbuvgovua-276842024-02-27T21:48:39Z Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings H. P. Haidar 1025-6415 2018 en Reports of the National Academy of Sciences of Ukraine http://jnas.nbuv.gov.ua/article/UJRN-0000898783 Article |
| spellingShingle | Reports of the National Academy of Sciences of Ukraine H. P. Haidar Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings |
| title | Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings |
| title_full | Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings |
| title_fullStr | Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings |
| title_full_unstemmed | Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings |
| title_short | Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings |
| title_sort | variations in electrophysical properties of heavily doped single crystals of n-ge<as> under the effect of thermal annealings |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000898783 |
| work_keys_str_mv | AT hphaidar variationsinelectrophysicalpropertiesofheavilydopedsinglecrystalsofngeampltasampgtundertheeffectofthermalannealings |