Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings

Variations in electrophysical properties of heavily doped single crystals of n-Ge<As> under the effect of thermal annealings

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Bibliographische Detailangaben
Datum:	2018
1. Verfasser:	H. P. Haidar
Format:	Artikel
Sprache:	English
Veröffentlicht:	2018
Schriftenreihe:	Reports of the National Academy of Sciences of Ukraine
Online Zugang:	http://jnas.nbuv.gov.ua/article/UJRN-0000898783
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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