Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization
Збережено в:
| Дата: | 2018 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2018
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| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000923043 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-28631 |
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open-sciencenbuvgovua-286312024-02-27T21:52:07Z Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization V. V. Korotyeyev V. O. Kochelap S. V. Sapon B. M. Romaniuk V. P. Melnik O. V. Dubikovskyi T. M. Sabov 1560-8034 2018 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000923043 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics V. V. Korotyeyev V. O. Kochelap S. V. Sapon B. M. Romaniuk V. P. Melnik O. V. Dubikovskyi T. M. Sabov Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization |
| format |
Article |
| author |
V. V. Korotyeyev V. O. Kochelap S. V. Sapon B. M. Romaniuk V. P. Melnik O. V. Dubikovskyi T. M. Sabov |
| author_facet |
V. V. Korotyeyev V. O. Kochelap S. V. Sapon B. M. Romaniuk V. P. Melnik O. V. Dubikovskyi T. M. Sabov |
| author_sort |
V. V. Korotyeyev |
| title |
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization |
| title_short |
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization |
| title_full |
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization |
| title_fullStr |
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization |
| title_full_unstemmed |
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization |
| title_sort |
be-ion implanted p-n insb diode for infrared applications. modeling, fabrication and characterization |
| publishDate |
2018 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000923043 |
| work_keys_str_mv |
AT vvkorotyeyev beionimplantedpninsbdiodeforinfraredapplicationsmodelingfabricationandcharacterization AT vokochelap beionimplantedpninsbdiodeforinfraredapplicationsmodelingfabricationandcharacterization AT svsapon beionimplantedpninsbdiodeforinfraredapplicationsmodelingfabricationandcharacterization AT bmromaniuk beionimplantedpninsbdiodeforinfraredapplicationsmodelingfabricationandcharacterization AT vpmelnik beionimplantedpninsbdiodeforinfraredapplicationsmodelingfabricationandcharacterization AT ovdubikovskyi beionimplantedpninsbdiodeforinfraredapplicationsmodelingfabricationandcharacterization AT tmsabov beionimplantedpninsbdiodeforinfraredapplicationsmodelingfabricationandcharacterization |
| first_indexed |
2024-03-30T08:22:45Z |
| last_indexed |
2024-03-30T08:22:45Z |
| _version_ |
1796880257856307200 |