Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization
Gespeichert in:
| Datum: | 2018 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
2018
|
| Schriftenreihe: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0000923043 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-28631 |
|---|---|
| record_format |
dspace |
| spelling |
open-sciencenbuvgovua-286312024-02-27T21:52:07Z Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization V. V. Korotyeyev V. O. Kochelap S. V. Sapon B. M. Romaniuk V. P. Melnik O. V. Dubikovskyi T. M. Sabov 1560-8034 2018 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000923043 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics V. V. Korotyeyev V. O. Kochelap S. V. Sapon B. M. Romaniuk V. P. Melnik O. V. Dubikovskyi T. M. Sabov Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization |
| format |
Article |
| author |
V. V. Korotyeyev V. O. Kochelap S. V. Sapon B. M. Romaniuk V. P. Melnik O. V. Dubikovskyi T. M. Sabov |
| author_facet |
V. V. Korotyeyev V. O. Kochelap S. V. Sapon B. M. Romaniuk V. P. Melnik O. V. Dubikovskyi T. M. Sabov |
| author_sort |
V. V. Korotyeyev |
| title |
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization |
| title_short |
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization |
| title_full |
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization |
| title_fullStr |
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization |
| title_full_unstemmed |
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization |
| title_sort |
be-ion implanted p-n insb diode for infrared applications. modeling, fabrication and characterization |
| publishDate |
2018 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000923043 |
| work_keys_str_mv |
AT vvkorotyeyev beionimplantedpninsbdiodeforinfraredapplicationsmodelingfabricationandcharacterization AT vokochelap beionimplantedpninsbdiodeforinfraredapplicationsmodelingfabricationandcharacterization AT svsapon beionimplantedpninsbdiodeforinfraredapplicationsmodelingfabricationandcharacterization AT bmromaniuk beionimplantedpninsbdiodeforinfraredapplicationsmodelingfabricationandcharacterization AT vpmelnik beionimplantedpninsbdiodeforinfraredapplicationsmodelingfabricationandcharacterization AT ovdubikovskyi beionimplantedpninsbdiodeforinfraredapplicationsmodelingfabricationandcharacterization AT tmsabov beionimplantedpninsbdiodeforinfraredapplicationsmodelingfabricationandcharacterization |
| first_indexed |
2025-07-17T15:22:32Z |
| last_indexed |
2025-07-17T15:22:32Z |
| _version_ |
1850414109887037440 |