Cover Image

Electrophysical and photoelectric characteristics of a three-barrier photodiode GaAs structure

Saved in:

Bibliographic Details
Date:	2018
Main Authors:	O. A. Abdulkhaev, D. M. Jodgorova, A. V. Karimov, A. A. Jakubov, Sh. M. Kuliev
Format:	Article
Language:	English
Published:	2018
Series:	Technology and design in electronic equipment
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000933501
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Three-barrier photodiodes based on gallium arsenide compounds for optical communication systems
by: D. M. Jodgorova, et al.
Published: (2009)

Study on the formation of current characteristics of a silicon photodiode with rectifying barriers
by: A. V. Karimov, et al.
Published: (2013)

Highly sensitive photodetector based on ge double-barrier punch-through structure
by: O. A. Abdulkhaev, et al.
Published: (2015)

Investigation of the effect of potential barriers on mechanisms current transfer in meetings of two-barrier silicon structures
by: O. A. Abdulkhaev, et al.
Published: (2011)

Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces
by: Dmitruk, N.L., et al.
Published: (2005)

Electrophysical characteristics of GaAs₁₋ₓPₓ LEDs irradiated by 2 MeV electrons
by: Vernydub, R.M., et al.
Published: (2020)

Memory phenomenon in two-barrier n++pnn+-structures
by: A. V. Karimov, et al.
Published: (2014)

Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction
by: Karimov, A.V., et al.
Published: (2005)

Електрофізичні та фотоелектричні характеристики трьохбар'єрної фотодіодної GaAs-структури
by: Abdulkhaev, O. A., et al.
Published: (2018)

Electrophysical characteristics of GaAs1-xPx LEDs irradiated by 2 MeV electrons
by: R. M. Vernydub, et al.
Published: (2020)

Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices
by: Ivanov, V.N., et al.
Published: (2003)

Peculiarities of manufacture, electrical and photoelectrical properties of diffusion Gep-i-n- photodiodes
by: V. P. Maslov, et al.
Published: (2018)

The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field
by: M. N. Vinoslavskij, et al.
Published: (2020)

Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: V. V. Vainberg, et al.
Published: (2013)

Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: Vainberg, V.V., et al.
Published: (2013)

Electrophysical characteristics of initial and irradiated GaAsP LEDs structures
by: O. V. Konoreva, et al.
Published: (2019)

Local plasmons contribution into photocurrent of Au/GaAs surface barrier structure with Au nanoparticles on interface
by: Mamykin, S., et al.
Published: (2009)

Determination of potential distribution in a three-barrier structure
by: Yodgorova, D.M., et al.
Published: (2006)

Effects of the real-space transfer of charge carriers in the n-AlGaAs/GaAs heterostructures with the delta-layers of impurity in the barriers
by: V. V. Vainberg, et al.
Published: (2014)

Effects of the real-space transfer of charge carriers in the n-AlGaAs/GaAs heterostructures with the delta-layers of impurity in the barriers
by: V. V. Vainberg, et al.
Published: (2014)

Study on phase characteristics of heterostructure por-Ga2O3/GaAs
by: S. S. Kovachov, et al.
Published: (2024)

Некоторые особенности фотоэлектрических характеристик двухбазовой Ag–N⁰Al₀.₂Ga₀.₈As–n⁺GaAs–n⁰Ga₀.₉In₀.₁As–Au-структуры
by: Yodgorova, D. M., et al.
Published: (2008)

Accurate numerical modelling the GaAs MESFET current-voltage characteristics
by: Merabtine, N., et al.
Published: (2004)

Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures
by: Abdizhaliev, S.K., et al.
Published: (2003)

Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs
by: Klimovskaya, A.I., et al.
Published: (2002)

Electrical and photoelectrical properties of the surface-barrier structures MoN/n-Si
by: M. M. Solovan, et al.
Published: (2019)

Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base
by: Yodgorova, D.M., et al.
Published: (2008)

A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
by: Sghaier, H., et al.
Published: (2012)

GaAs Gunn Diodes with AlAs-GaAs-AlAs Resonance Tunnel Cathode
by: Storozhenko, I. P., et al.
Published: (2013)

Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
by: Kladko, V.P., et al.
Published: (2000)

Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field
by: Holovatsky, V.A., et al.
Published: (2018)

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: M. M. Vinoslavskii, et al.
Published: (2018)

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: Vinoslavskii, M.M., et al.
Published: (2018)

Control of the electrophysical characteristics of two-barrier silicon structures with a nanostructured base using gamma radiation
by: Madatov, R.S., et al.
Published: (2023)

Characteristics of interface corrugations in short-period GaAs/AlAs superlattices
by: Daweritz, L., et al.
Published: (1998)

Отримання мікропоруватих шарів GaAs методом хімічного травлення на підкладках р-GaAs та їхня фотолюмінісценція
by: Paschenko, G. A., et al.
Published: (2012)

TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment
by: Kryshtab, T.G., et al.
Published: (1999)

Investigation of the saturation effect of the drain current of a field-effect transistor with series-connected channels
by: A. V. Karimov, et al.
Published: (2012)

Chemical polishing of InAs, InSb, GaAs and GaSb
by: Levchenko, I.V., et al.
Published: (2017)

GaAs диоды Ганна с AlAs-GaAs-AlAs резонансно туннельным катодом
by: Стороженко, И.П., et al.
Published: (2006)