Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing
Збережено в:
| Дата: | 2018 |
|---|---|
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2018
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| Назва видання: | Ukrainian Journal of Physics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000940845 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-29811 |
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open-sciencenbuvgovua-298112024-02-27T21:57:31Z Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing M. M. Krasko A. H. Kolosiuk V. V. Voitovych Yu. Povarchuk I. S. Rohutskyi 0372-400X 2018 en Ukrainian Journal of Physics http://jnas.nbuv.gov.ua/article/UJRN-0000940845 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Ukrainian Journal of Physics |
| spellingShingle |
Ukrainian Journal of Physics M. M. Krasko A. H. Kolosiuk V. V. Voitovych Yu. Povarchuk I. S. Rohutskyi Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| format |
Article |
| author |
M. M. Krasko A. H. Kolosiuk V. V. Voitovych Yu. Povarchuk I. S. Rohutskyi |
| author_facet |
M. M. Krasko A. H. Kolosiuk V. V. Voitovych Yu. Povarchuk I. S. Rohutskyi |
| author_sort |
M. M. Krasko |
| title |
Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title_short |
Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title_full |
Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title_fullStr |
Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title_full_unstemmed |
Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title_sort |
influence of divacancy-oxygen defects on recombination properties of n-si subjected to irradiation and subsequent annealing |
| publishDate |
2018 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000940845 |
| work_keys_str_mv |
AT mmkrasko influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing AT ahkolosiuk influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing AT vvvoitovych influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing AT yupovarchuk influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing AT isrohutskyi influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing |
| first_indexed |
2024-03-30T08:28:13Z |
| last_indexed |
2024-03-30T08:28:13Z |
| _version_ |
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