Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing
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| Datum: | 2018 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
2018
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| Schriftenreihe: | Ukrainian Journal of Physics |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0000940845 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859508059069480960 |
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| author | M. M. Krasko A. H. Kolosiuk V. V. Voitovych Yu. Povarchuk I. S. Rohutskyi |
| author_facet | M. M. Krasko A. H. Kolosiuk V. V. Voitovych Yu. Povarchuk I. S. Rohutskyi |
| author_sort | M. M. Krasko |
| collection | Open-Science |
| first_indexed | 2025-07-17T15:43:45Z |
| format | Article |
| id | open-sciencenbuvgovua-29811 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T15:43:45Z |
| publishDate | 2018 |
| record_format | dspace |
| series | Ukrainian Journal of Physics |
| spelling | open-sciencenbuvgovua-298112024-02-27T21:57:31Z Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing M. M. Krasko A. H. Kolosiuk V. V. Voitovych Yu. Povarchuk I. S. Rohutskyi 0372-400X 2018 en Ukrainian Journal of Physics http://jnas.nbuv.gov.ua/article/UJRN-0000940845 Article |
| spellingShingle | Ukrainian Journal of Physics M. M. Krasko A. H. Kolosiuk V. V. Voitovych Yu. Povarchuk I. S. Rohutskyi Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title | Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title_full | Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title_fullStr | Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title_full_unstemmed | Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title_short | Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title_sort | influence of divacancy-oxygen defects on recombination properties of n-si subjected to irradiation and subsequent annealing |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000940845 |
| work_keys_str_mv | AT mmkrasko influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing AT ahkolosiuk influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing AT vvvoitovych influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing AT yupovarchuk influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing AT isrohutskyi influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing |