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Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing

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Bibliographic Details
Date:	2018
Main Authors:	M. M. Krasko, A. H. Kolosiuk, V. V. Voitovych, Yu. Povarchuk, I. S. Rohutskyi
Format:	Article
Language:	English
Published:	2018
Series:	Ukrainian Journal of Physics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000940845
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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