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Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing

Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing

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Bibliographic Details
Main Authors: M. M. Krasko, A. G. Kolosiuk, V. V. Voitovych, Yu. Povarchuk, I. S. Rogutskyi
Format: Article
Language:English
Published: 2018
Series:Ukrainian journal of physics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000940905
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spelling open-sciencenbuvgovua-298282024-02-27T21:57:39Z Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing M. M. Krasko A. G. Kolosiuk V. V. Voitovych Yu. Povarchuk I. S. Rogutskyi 2071-0186 2018 en Ukrainian journal of physics http://jnas.nbuv.gov.ua/article/UJRN-0000940905 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Ukrainian journal of physics
spellingShingle Ukrainian journal of physics
M. M. Krasko
A. G. Kolosiuk
V. V. Voitovych
Yu. Povarchuk
I. S. Rogutskyi
Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing
format Article
author M. M. Krasko
A. G. Kolosiuk
V. V. Voitovych
Yu. Povarchuk
I. S. Rogutskyi
author_facet M. M. Krasko
A. G. Kolosiuk
V. V. Voitovych
Yu. Povarchuk
I. S. Rogutskyi
author_sort M. M. Krasko
title Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing
title_short Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing
title_full Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing
title_fullStr Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing
title_full_unstemmed Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing
title_sort influence of divacancy-oxygen defects on recombination properties of n-si subjected to irradiation and subsequent annealing
publishDate 2018
url http://jnas.nbuv.gov.ua/article/UJRN-0000940905
work_keys_str_mv AT mmkrasko influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing
AT agkolosiuk influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing
AT vvvoitovych influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing
AT yupovarchuk influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing
AT isrogutskyi influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing
first_indexed 2024-03-30T08:28:17Z
last_indexed 2024-03-30T08:28:17Z
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