Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing
Збережено в:
| Дата: | 2018 |
|---|---|
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2018
|
| Назва видання: | Ukrainian journal of physics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000940905 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859508065548632064 |
|---|---|
| author | M. M. Krasko A. G. Kolosiuk V. V. Voitovych Yu. Povarchuk I. S. Rogutskyi |
| author_facet | M. M. Krasko A. G. Kolosiuk V. V. Voitovych Yu. Povarchuk I. S. Rogutskyi |
| author_sort | M. M. Krasko |
| collection | Open-Science |
| first_indexed | 2025-07-17T15:44:40Z |
| format | Article |
| id | open-sciencenbuvgovua-29828 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T15:44:40Z |
| publishDate | 2018 |
| record_format | dspace |
| series | Ukrainian journal of physics |
| spelling | open-sciencenbuvgovua-298282024-02-27T21:57:39Z Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing M. M. Krasko A. G. Kolosiuk V. V. Voitovych Yu. Povarchuk I. S. Rogutskyi 2071-0186 2018 en Ukrainian journal of physics http://jnas.nbuv.gov.ua/article/UJRN-0000940905 Article |
| spellingShingle | Ukrainian journal of physics M. M. Krasko A. G. Kolosiuk V. V. Voitovych Yu. Povarchuk I. S. Rogutskyi Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title | Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title_full | Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title_fullStr | Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title_full_unstemmed | Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title_short | Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing |
| title_sort | influence of divacancy-oxygen defects on recombination properties of n-si subjected to irradiation and subsequent annealing |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000940905 |
| work_keys_str_mv | AT mmkrasko influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing AT agkolosiuk influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing AT vvvoitovych influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing AT yupovarchuk influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing AT isrogutskyi influenceofdivacancyoxygendefectsonrecombinationpropertiesofnsisubjectedtoirradiationandsubsequentannealing |