Investigation of band gap width in mixed ZnSxSe1–x crystals
Saved in:
| Date: | 2018 |
|---|---|
| Main Authors: | O. G. Trubaeva, M. A. Chajka |
| Format: | Article |
| Language: | English |
| Published: |
2018
|
| Series: | Technology and design in electronic equipment |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000952636 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Effect of sulfur on the scintillation properties of mixed ZnSxSe1–x crystals
by: O. G. Trubaeva, et al.
Published: (2018) -
Mixed ZnSxSe₁-x crystals for digital radiography detectors
by: Trubaieva, O.G., et al.
Published: (2018) -
Band gap change of bulk ZnSxSe1 – x semiconductors by controlling the sulfur content
by: O. G. Trubaieva, et al.
Published: (2018) -
Band gap change of bulk ZnSxSe1 – x semiconductors by controlling the sulfur content
by: O. G. Trubaieva, et al.
Published: (2018) -
Mixed ZnSxSe1–x crystals as a possible material for alpha-particle and X-ray detectors
by: O. G. Trubaieva, et al.
Published: (2018)