Insulator–quantum Hall transition in n-InGaAs/GaAs heterostructures
Saved in:
| Date: | 2017 |
|---|---|
| Main Authors: | A. P. Savelev, S. V. Gudina, Ju. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin |
| Format: | Article |
| Language: | English |
| Published: |
2017
|
| Series: | Low Temperature Physics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000687587 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
Plateau–plateau transitions in the quantum Hall regime for a single quantum well heterostructure n-InGaAs/GaAs before and after IR illumination
by: Ju. G. Arapov, et al.
Published: (2015)
by: Ju. G. Arapov, et al.
Published: (2015)
Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with double stronglycoupled quantum wells
by: Ju. G. Arapov, et al.
Published: (2013)
by: Ju. G. Arapov, et al.
Published: (2013)
Quantum magnetotransport in n-InGaAs/GaAs structures under change of electron density by infrared illumination
by: Ju. G. Arapov, et al.
Published: (2015)
by: Ju. G. Arapov, et al.
Published: (2015)
The effect of infrared illumination on quantum magnetotransport in strongly coupled n-InGaAs/GaAs double quantum wells
by: S. V. Gudina, et al.
Published: (2013)
by: S. V. Gudina, et al.
Published: (2013)
Temperature dependence of band width of delocalized states for n-InGaAs/GaAs in the quantum Hall effect regime
by: Ju. G. Arapov, et al.
Published: (2013)
by: Ju. G. Arapov, et al.
Published: (2013)
Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures
by: A. P. Savelyev, et al.
Published: (2021)
by: A. P. Savelyev, et al.
Published: (2021)
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
by: S. A. Iliash, et al.
Published: (2016)
by: S. A. Iliash, et al.
Published: (2016)
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
by: Iliash, S.A., et al.
Published: (2016)
by: Iliash, S.A., et al.
Published: (2016)
Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: V. V. Vainberg, et al.
Published: (2013)
by: V. V. Vainberg, et al.
Published: (2013)
Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: Vainberg, V.V., et al.
Published: (2013)
by: Vainberg, V.V., et al.
Published: (2013)
Optical characterization of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures
by: Zhuchenko, Z.Ya., et al.
Published: (1999)
by: Zhuchenko, Z.Ya., et al.
Published: (1999)
Magnetooptics of heterostructures with InGaAs/GaAs quantum well and a ferromagnetic Mn deltalayer
by: S. V. Zajtsev
Published: (2012)
by: S. V. Zajtsev
Published: (2012)
Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
by: Zhuchenko, Z.Ya., et al.
Published: (1999)
by: Zhuchenko, Z.Ya., et al.
Published: (1999)
Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects
by: Masselink, W.T., et al.
Published: (2000)
by: Masselink, W.T., et al.
Published: (2000)
A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
by: Sghaier, H., et al.
Published: (2012)
by: Sghaier, H., et al.
Published: (2012)
Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: M. M. Vinoslavskii, et al.
Published: (2018)
by: M. M. Vinoslavskii, et al.
Published: (2018)
Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: Vinoslavskii, M.M., et al.
Published: (2018)
by: Vinoslavskii, M.M., et al.
Published: (2018)
Modeling the intermixing effects in highly strained asymmetric InGaAs/GaAs quantum well
by: Souaf, M., et al.
Published: (2015)
by: Souaf, M., et al.
Published: (2015)
Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs
by: Klimovskaya, A.I., et al.
Published: (2002)
by: Klimovskaya, A.I., et al.
Published: (2002)
Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
by: Boltovets, N.S., et al.
Published: (2006)
by: Boltovets, N.S., et al.
Published: (2006)
Комплексное легирование слоев GaAs, InGaAs при жидкофазной эпитаксии
by: Круковский, С.И.
Published: (2002)
by: Круковский, С.И.
Published: (2002)
Солнечные элементы на основе тандемных гетероструктур GaAs-InGaAs-AlGaAs
by: Круковский, С.И., et al.
Published: (2003)
by: Круковский, С.И., et al.
Published: (2003)
Солнечные элементы на основе тандемных гетероструктур GaAs–InGaAs–AlGaAs
by: Krukovsky, S. I., et al.
Published: (2003)
by: Krukovsky, S. I., et al.
Published: (2003)
The conditions of longitudinal and Hall conductance critical behavior in quantum Hall regime for heterostructures based on gallium and indium arsenide
by: A. S. Klepikova, et al.
Published: (2017)
by: A. S. Klepikova, et al.
Published: (2017)
Особенности квантовых эффектов в 2D-структурах GaAs/n-InGaAs/GaAs с двойными квантовыми ямами
by: Арапов, Ю.Г., et al.
Published: (2007)
by: Арапов, Ю.Г., et al.
Published: (2007)
Excitonic parameters of InxGa1-xAs−GaAs heterostructures with quantum wells at low temperatures
by: N. M. Litovchenko, et al.
Published: (2013)
by: N. M. Litovchenko, et al.
Published: (2013)
Excitonic parameters of InxGa1-xAs−GaAs heterostructures with quantum wells at low temperatures
by: N. M. Lytovchenko, et al.
Published: (2013)
by: N. M. Lytovchenko, et al.
Published: (2013)
The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field
by: M. N. Vinoslavskij, et al.
Published: (2020)
by: M. N. Vinoslavskij, et al.
Published: (2020)
Получение тандемных гетероструктур GaAs—InGaAs—AlGaAs для фотопреобразователей солнечной энергии
by: Николаенко, Ю.Е., et al.
Published: (2002)
by: Николаенко, Ю.Е., et al.
Published: (2002)
Модули солнечных элементов на основе тандемных гетероструктур GaAs–InGaAs–AlGaAs
by: Krukovskiy, S. I., et al.
Published: (2004)
by: Krukovskiy, S. I., et al.
Published: (2004)
Модули солнечных элементов на основе тандемных гетероструктур GaAs-InGaAs-AlGaAs
by: Круковский, С.И., et al.
Published: (2004)
by: Круковский, С.И., et al.
Published: (2004)
2D magnetofermionic condensate in GaAs/AlGaAs heterostructures
by: L. V. Kulik, et al.
Published: (2017)
by: L. V. Kulik, et al.
Published: (2017)
Deep attachment levels in In0.4Ga0.6As/GaAs heterostructures with quantum dots
by: O. V. Vakulenko, et al.
Published: (2011)
by: O. V. Vakulenko, et al.
Published: (2011)
A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs)
by: H. Sghaier, et al.
Published: (2012)
by: H. Sghaier, et al.
Published: (2012)
Квантовая эффективность резонансного InGaAs/GaAs фотодетектора для сверхкоротких оптических соединений
by: Грищенко, С.В., et al.
Published: (2007)
by: Грищенко, С.В., et al.
Published: (2007)
Study on phase characteristics of heterostructure por-Ga2O3/GaAs
by: S. S. Kovachov, et al.
Published: (2024)
by: S. S. Kovachov, et al.
Published: (2024)
Coherence of Bose–Einstein condensate of dipolar excitons in GaAs/AlGaAs heterostructure
by: A. V. Gorbunov, et al.
Published: (2016)
by: A. V. Gorbunov, et al.
Published: (2016)
Магнитооптика гетероструктур с квантовой ямой InGaAs/GaAs и ферромагнитным дельта-слоем Mn
by: Зайцев, С.В.
Published: (2012)
by: Зайцев, С.В.
Published: (2012)
Effect of quantum dot shape of the GaAs/AlAs heterostructure on interlevel hole light absorption
by: Boichuk, V.I., et al.
Published: (2013)
by: Boichuk, V.I., et al.
Published: (2013)
Activation transport under quantum Hall regime in HgTe-based heterostructure
by: S. V. Gudina, et al.
Published: (2017)
by: S. V. Gudina, et al.
Published: (2017)
Similar Items
-
Plateau–plateau transitions in the quantum Hall regime for a single quantum well heterostructure n-InGaAs/GaAs before and after IR illumination
by: Ju. G. Arapov, et al.
Published: (2015) -
Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with double stronglycoupled quantum wells
by: Ju. G. Arapov, et al.
Published: (2013) -
Quantum magnetotransport in n-InGaAs/GaAs structures under change of electron density by infrared illumination
by: Ju. G. Arapov, et al.
Published: (2015) -
The effect of infrared illumination on quantum magnetotransport in strongly coupled n-InGaAs/GaAs double quantum wells
by: S. V. Gudina, et al.
Published: (2013) -
Temperature dependence of band width of delocalized states for n-InGaAs/GaAs in the quantum Hall effect regime
by: Ju. G. Arapov, et al.
Published: (2013)