Kozynets, O. V., Lytvynenk, C. V., & Skryshevskyi, V. A. (2017). Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction.
Chicago Style (17th ed.) CitationKozynets, O. V., C. V. Lytvynenk, and V. A. Skryshevskyi. Physical Properties of Silicon Sensor Structures with Photoelectric Transformation on the Basis of "deep" P–n-junction. 2017.
MLA (8th ed.) CitationKozynets, O. V., et al. Physical Properties of Silicon Sensor Structures with Photoelectric Transformation on the Basis of "deep" P–n-junction. 2017.
Warning: These citations may not always be 100% accurate.