Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
Збережено в:
| Дата: | 2017 |
|---|---|
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2017
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| Назва видання: | Ukrainian Journal of Physics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000703686 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-35977 |
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| record_format |
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open-sciencenbuvgovua-359772024-02-29T11:29:39Z Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction O. V. Kozynets C. V. Lytvynenk V. A. Skryshevskyi 0372-400X 2017 en Ukrainian Journal of Physics http://jnas.nbuv.gov.ua/article/UJRN-0000703686 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Ukrainian Journal of Physics |
| spellingShingle |
Ukrainian Journal of Physics O. V. Kozynets C. V. Lytvynenk V. A. Skryshevskyi Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| format |
Article |
| author |
O. V. Kozynets C. V. Lytvynenk V. A. Skryshevskyi |
| author_facet |
O. V. Kozynets C. V. Lytvynenk V. A. Skryshevskyi |
| author_sort |
O. V. Kozynets |
| title |
Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title_short |
Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title_full |
Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title_fullStr |
Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title_full_unstemmed |
Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title_sort |
physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| publishDate |
2017 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000703686 |
| work_keys_str_mv |
AT ovkozynets physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofquotdeepquotpnjunction AT cvlytvynenk physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofquotdeepquotpnjunction AT vaskryshevskyi physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofquotdeepquotpnjunction |
| first_indexed |
2024-03-30T08:58:35Z |
| last_indexed |
2024-03-30T08:58:35Z |
| _version_ |
1796881025531379712 |