Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
Збережено в:
| Дата: | 2017 |
|---|---|
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2017
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| Назва видання: | Ukrainian Journal of Physics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000703686 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859508988439166977 |
|---|---|
| author | O. V. Kozynets C. V. Lytvynenk V. A. Skryshevskyi |
| author_facet | O. V. Kozynets C. V. Lytvynenk V. A. Skryshevskyi |
| author_sort | O. V. Kozynets |
| collection | Open-Science |
| first_indexed | 2025-07-17T18:06:35Z |
| format | Article |
| id | open-sciencenbuvgovua-35977 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T18:06:35Z |
| publishDate | 2017 |
| record_format | dspace |
| series | Ukrainian Journal of Physics |
| spelling | open-sciencenbuvgovua-359772024-02-29T11:29:39Z Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction O. V. Kozynets C. V. Lytvynenk V. A. Skryshevskyi 0372-400X 2017 en Ukrainian Journal of Physics http://jnas.nbuv.gov.ua/article/UJRN-0000703686 Article |
| spellingShingle | Ukrainian Journal of Physics O. V. Kozynets C. V. Lytvynenk V. A. Skryshevskyi Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title | Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title_full | Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title_fullStr | Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title_full_unstemmed | Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title_short | Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title_sort | physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000703686 |
| work_keys_str_mv | AT ovkozynets physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofampquotdeepampquotpnjunction AT cvlytvynenk physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofampquotdeepampquotpnjunction AT vaskryshevskyi physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofampquotdeepampquotpnjunction |