Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction

Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction

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Bibliographic Details
Date:2017
Main Authors: O. V. Kozynets, C. V. Lytvynenk, V. A. Skryshevskyi
Format: Article
Language:English
Published: 2017
Series:Ukrainian Journal of Physics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000703686
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Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
id open-sciencenbuvgovua-35977
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spelling open-sciencenbuvgovua-359772024-02-29T11:29:39Z Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction O. V. Kozynets C. V. Lytvynenk V. A. Skryshevskyi 0372-400X 2017 en Ukrainian Journal of Physics http://jnas.nbuv.gov.ua/article/UJRN-0000703686 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Ukrainian Journal of Physics
spellingShingle Ukrainian Journal of Physics
O. V. Kozynets
C. V. Lytvynenk
V. A. Skryshevskyi
Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
format Article
author O. V. Kozynets
C. V. Lytvynenk
V. A. Skryshevskyi
author_facet O. V. Kozynets
C. V. Lytvynenk
V. A. Skryshevskyi
author_sort O. V. Kozynets
title Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
title_short Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
title_full Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
title_fullStr Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
title_full_unstemmed Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
title_sort physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
publishDate 2017
url http://jnas.nbuv.gov.ua/article/UJRN-0000703686
work_keys_str_mv AT ovkozynets physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofquotdeepquotpnjunction
AT cvlytvynenk physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofquotdeepquotpnjunction
AT vaskryshevskyi physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofquotdeepquotpnjunction
first_indexed 2025-07-17T18:06:35Z
last_indexed 2025-07-17T18:06:35Z
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