Kozinetz, A. V., Litvinenko, S. V., & Skryshevsky, V. A. (2017). Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction.
Chicago Style (17th ed.) CitationKozinetz, A. V., S. V. Litvinenko, and V. A. Skryshevsky. Physical Properties of Silicon Sensor Structures with Photoelectric Transformation on the Basis of "deep" P–n-junction. 2017.
MLA (8th ed.) CitationKozinetz, A. V., et al. Physical Properties of Silicon Sensor Structures with Photoelectric Transformation on the Basis of "deep" P–n-junction. 2017.
Warning: These citations may not always be 100% accurate.