Effect of thermal annealing on electrical and photoelectrical properties of n-InSb
Saved in:
| Date: | 2017 |
|---|---|
| Main Authors: | S. V. Stariy, A. V. Sukach, V. V. Tetyorkin, V. O. Yukhymchuk, T. R. Stara |
| Format: | Article |
| Language: | English |
| Published: |
2017
|
| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000714492 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
Effect of thermal annealing on electrical and photoelectrical properties of n-InSb
by: Stariy, S.V., et al.
Published: (2017)
by: Stariy, S.V., et al.
Published: (2017)
Electrical properties of InSb p-n junctions prepared by diffusion methods
by: A. V. Sukach, et al.
Published: (2016)
by: A. V. Sukach, et al.
Published: (2016)
Electrical properties of InSb p-n junctions prepared by diffusion methods
by: Sukach, A.V., et al.
Published: (2016)
by: Sukach, A.V., et al.
Published: (2016)
Carrier transport mechanisms in reverse biased InSb p-n junctions
by: Sukach, A.V., et al.
Published: (2015)
by: Sukach, A.V., et al.
Published: (2015)
Carrier transport mechanisms in reverse biased InSb p-n junctions
by: A. V. Sukach, et al.
Published: (2015)
by: A. V. Sukach, et al.
Published: (2015)
Recombination and trapping of excess carriers in n-InSb
by: V. V. Tetyorkin, et al.
Published: (2024)
by: V. V. Tetyorkin, et al.
Published: (2024)
Recombination and trapping of excess carriers in n-InSb
by: V. V. Tetyorkin, et al.
Published: (2024)
by: V. V. Tetyorkin, et al.
Published: (2024)
Carrier transport mechanisms in InSb diffusion p-n junctions
by: A. Sukach, et al.
Published: (2014)
by: A. Sukach, et al.
Published: (2014)
Carrier transport mechanisms in InSb diffusion p-n junctions
by: Sukach, A., et al.
Published: (2014)
by: Sukach, A., et al.
Published: (2014)
Trap-assisted conductivity in anodic oxide on InSb
by: G. V. Beketov, et al.
Published: (2017)
by: G. V. Beketov, et al.
Published: (2017)
Trap-assisted conductivity in anodic oxide on InSb
by: Beketov, G.V., et al.
Published: (2017)
by: Beketov, G.V., et al.
Published: (2017)
S1/f noise and carrier transport mechanisms in InSb p + -n junctions
by: V. V. Tetyorkin, et al.
Published: (2018)
by: V. V. Tetyorkin, et al.
Published: (2018)
1/f noise and carrier transport mechanisms in InSb p⁺-n junctions
by: Tetyorkin, V.V., et al.
Published: (2018)
by: Tetyorkin, V.V., et al.
Published: (2018)
Tunneling current via dislocations in InAs and InSb infrared photodiodes
by: A. V. Sukach, et al.
Published: (2011)
by: A. V. Sukach, et al.
Published: (2011)
InSb Photodiodes (Review, Part I)
by: A. V. Sukach, et al.
Published: (2016)
by: A. V. Sukach, et al.
Published: (2016)
InSb Photodiodes (Review, Part II)
by: A. V. Sukach, et al.
Published: (2016)
by: A. V. Sukach, et al.
Published: (2016)
Trotsenko. InSb photodiodes (Review. Part III)
by: A. V. Sukach, et al.
Published: (2017)
by: A. V. Sukach, et al.
Published: (2017)
Influence of pulse thermal annealing on photoelectrical properties of locally grown polycrystalline silicon films
by: Mamikonova, V.M., et al.
Published: (1999)
by: Mamikonova, V.M., et al.
Published: (1999)
Chemical polishing of InAs, InSb, GaAs and GaSb
by: Levchenko, I.V., et al.
Published: (2017)
by: Levchenko, I.V., et al.
Published: (2017)
Peculiarities of manufacture, electrical and photoelectrical properties of diffusion Gep-i-n- photodiodes
by: V. P. Maslov, et al.
Published: (2018)
by: V. P. Maslov, et al.
Published: (2018)
Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
by: Boltovets, N.S., et al.
Published: (2006)
by: Boltovets, N.S., et al.
Published: (2006)
InSb фотодіоди (Огляд. Частина I)
by: Сукач, А.В., et al.
Published: (2016)
by: Сукач, А.В., et al.
Published: (2016)
Berry phase in strained InSb whiskers
by: Druzhinin, A., et al.
Published: (2018)
by: Druzhinin, A., et al.
Published: (2018)
Quantization in magnetoresistance of strained InSb whiskers
by: A. Druzhinin, et al.
Published: (2019)
by: A. Druzhinin, et al.
Published: (2019)
Berry phase in strained InSb whiskers
by: A. Druzhinin, et al.
Published: (2018)
by: A. Druzhinin, et al.
Published: (2018)
InSb фотодіоди (Огляд. Частина II)
by: Сукач, А.В., et al.
Published: (2016)
by: Сукач, А.В., et al.
Published: (2016)
Quantization in magnetoresistance of strained InSb whiskers
by: Druzhinin, A., et al.
Published: (2019)
by: Druzhinin, A., et al.
Published: (2019)
Electrical and photoelectrical properties of a-SICN/c-SI heterojunctions
by: A. V. Sukach, et al.
Published: (2013)
by: A. V. Sukach, et al.
Published: (2013)
Исследование спектров фотолюминесценции низкоразмерных структур InSb, сформированных в матрице GaSb
by: Andronova, E. V., et al.
Published: (2011)
by: Andronova, E. V., et al.
Published: (2011)
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization
by: V. V. Korotyeyev, et al.
Published: (2018)
by: V. V. Korotyeyev, et al.
Published: (2018)
Be-ion-implanted p-n InSb diode for infrared applications. Modeling, fabrication, and characterization
by: Korotyeyev, V.V., et al.
Published: (2018)
by: Korotyeyev, V.V., et al.
Published: (2018)
Polarization dependences of radiation emission by hot carriers in InSb
by: V. M. Bondar, et al.
Published: (2016)
by: V. M. Bondar, et al.
Published: (2016)
Polarization dependences of radiation emission by hot carriers in InSb
by: V. M. Bondar, et al.
Published: (2016)
by: V. M. Bondar, et al.
Published: (2016)
Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x
by: Venger, E.F., et al.
Published: (2006)
by: Venger, E.F., et al.
Published: (2006)
Photoelectrical properties of p+-inp/n-ingaasp/n-inp double heterojunctions
by: S. I. Krukovskyi, et al.
Published: (2012)
by: S. I. Krukovskyi, et al.
Published: (2012)
Electrical and photoelectrical properties of the surface-barrier structures MoN/n-Si
by: M. M. Solovan, et al.
Published: (2019)
by: M. M. Solovan, et al.
Published: (2019)
Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals
by: Virt, I.S., et al.
Published: (2000)
by: Virt, I.S., et al.
Published: (2000)
Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact
by: Kovalyuk, Z.D., et al.
Published: (2004)
by: Kovalyuk, Z.D., et al.
Published: (2004)
Calculation of absorption coefficients of InSb₁₋xBix solid solutions
by: Vyklyuk, J.I., et al.
Published: (2000)
by: Vyklyuk, J.I., et al.
Published: (2000)
Исследование спектров фотолюминесценции низкоразмерных структур InSb, сформированных в матрице GaSb
by: Андронова, Е.В., et al.
Published: (2011)
by: Андронова, Е.В., et al.
Published: (2011)
Similar Items
-
Effect of thermal annealing on electrical and photoelectrical properties of n-InSb
by: Stariy, S.V., et al.
Published: (2017) -
Electrical properties of InSb p-n junctions prepared by diffusion methods
by: A. V. Sukach, et al.
Published: (2016) -
Electrical properties of InSb p-n junctions prepared by diffusion methods
by: Sukach, A.V., et al.
Published: (2016) -
Carrier transport mechanisms in reverse biased InSb p-n junctions
by: Sukach, A.V., et al.
Published: (2015) -
Carrier transport mechanisms in reverse biased InSb p-n junctions
by: A. V. Sukach, et al.
Published: (2015)