Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing
Saved in:
| Date: | 2017 |
|---|---|
| Main Authors: | A. V. Fomin, G. A. Pashchenko, Yu. Kravetskyi, I. G. Lutsyshyn |
| Format: | Article |
| Language: | English |
| Published: |
2017
|
| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000714494 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing
by: Fomin, A.V., et al.
Published: (2017)
by: Fomin, A.V., et al.
Published: (2017)
Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing
by: G. A. Pashchenko, et al.
Published: (2015)
by: G. A. Pashchenko, et al.
Published: (2015)
Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing
by: Pashchenko, G.A., et al.
Published: (2015)
by: Pashchenko, G.A., et al.
Published: (2015)
Balance model for contactless chemo-mechanical polishing of wafers
by: Grigoriev, N.N., et al.
Published: (2002)
by: Grigoriev, N.N., et al.
Published: (2002)
Chemical polishing of InAs, InSb, GaAs and GaSb
by: Levchenko, I.V., et al.
Published: (2017)
by: Levchenko, I.V., et al.
Published: (2017)
Surface roughness of optoelectronic components in mechanical polishing
by: Ju. D. Filatov
Published: (2018)
by: Ju. D. Filatov
Published: (2018)
Features of electrochemical processes at the boundary p-GaAs-HF water solution
by: G. A. Pashchenko, et al.
Published: (2018)
by: G. A. Pashchenko, et al.
Published: (2018)
Features of electrochemical processes at the boundary p-GaAs-HF water solution
by: Pashchenko, G.A., et al.
Published: (2018)
by: Pashchenko, G.A., et al.
Published: (2018)
Отримання мікропоруватих шарів GaAs методом хімічного травлення на підкладках р-GaAs та їхня фотолюмінісценція
by: Paschenko, G. A., et al.
Published: (2012)
by: Paschenko, G. A., et al.
Published: (2012)
Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition
by: Levchenko, I.V., et al.
Published: (2018)
by: Levchenko, I.V., et al.
Published: (2018)
Polished surface roughness of optoelectronic components made of monocrystalline materials
by: Ju. Filatov, et al.
Published: (2016)
by: Ju. Filatov, et al.
Published: (2016)
Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: V. V. Vainberg, et al.
Published: (2013)
by: V. V. Vainberg, et al.
Published: (2013)
Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: Vainberg, V.V., et al.
Published: (2013)
by: Vainberg, V.V., et al.
Published: (2013)
Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs
by: Klimovskaya, A.I., et al.
Published: (2002)
by: Klimovskaya, A.I., et al.
Published: (2002)
Roughness of polished surfaces of optoelectronic elements made of polymeric optical materials
by: Yu. D. Filatov, et al.
Published: (2023)
by: Yu. D. Filatov, et al.
Published: (2023)
A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
by: Sghaier, H., et al.
Published: (2012)
by: Sghaier, H., et al.
Published: (2012)
GaAs Gunn Diodes with AlAs-GaAs-AlAs Resonance Tunnel Cathode
by: Storozhenko, I. P., et al.
Published: (2013)
by: Storozhenko, I. P., et al.
Published: (2013)
Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction
by: Karimov, A.V., et al.
Published: (2005)
by: Karimov, A.V., et al.
Published: (2005)
Effect of γ-irradiation on the structure of high density polyethylene composites with GaAs and GaAs<Te> fillers
by: Gadzhieva, N.N., et al.
Published: (2020)
by: Gadzhieva, N.N., et al.
Published: (2020)
Optical characterization of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures
by: Zhuchenko, Z.Ya., et al.
Published: (1999)
by: Zhuchenko, Z.Ya., et al.
Published: (1999)
Influence of ion implantation and annealing on composition and structure of GaAs surface
by: Normuradov, M.T., et al.
Published: (2002)
by: Normuradov, M.T., et al.
Published: (2002)
GaAs диоды Ганна с AlAs-GaAs-AlAs резонансно туннельным катодом
by: Стороженко, И.П., et al.
Published: (2006)
by: Стороженко, И.П., et al.
Published: (2006)
Дизайн та дослідження фазових характеристик гетероструктури por-Ga2O3/por-GaAs/mono-GaAs
by: Kovachov, S. S., et al.
Published: (2024)
by: Kovachov, S. S., et al.
Published: (2024)
Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation
by: Arkusha, Yu. V., et al.
Published: (2013)
by: Arkusha, Yu. V., et al.
Published: (2013)
Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
by: Boltovets, N.S., et al.
Published: (2002)
by: Boltovets, N.S., et al.
Published: (2002)
TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment
by: Kryshtab, T.G., et al.
Published: (1999)
by: Kryshtab, T.G., et al.
Published: (1999)
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
by: Kladko, V.P., et al.
Published: (2000)
by: Kladko, V.P., et al.
Published: (2000)
Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer
by: A. V. Sachenko, et al.
Published: (2013)
by: A. V. Sachenko, et al.
Published: (2013)
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods
by: Zymierska, D., et al.
Published: (2000)
by: Zymierska, D., et al.
Published: (2000)
Optical properties of p-type porous GaAs
by: Kidalov, V.V., et al.
Published: (2005)
by: Kidalov, V.V., et al.
Published: (2005)
Atom dispersion on the rough surface
by: A. S. Dolgov, et al.
Published: (2008)
by: A. S. Dolgov, et al.
Published: (2008)
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
by: S. A. Iliash, et al.
Published: (2016)
by: S. A. Iliash, et al.
Published: (2016)
Wave transformation from statistically rough surface
by: Bass, F.G., et al.
Published: (2009)
by: Bass, F.G., et al.
Published: (2009)
Deagglomeration of aerosil in polishing suspension for chemical-mechanical polishing of sapphire
by: Vovk, E.A.
Published: (2015)
by: Vovk, E.A.
Published: (2015)
Chemical-mechanical polishing of sapphire by polishing suspension based on aerosil
by: Vovk, E.A.
Published: (2015)
by: Vovk, E.A.
Published: (2015)
Insulator–quantum Hall transition in n-InGaAs/GaAs heterostructures
by: A. P. Savelev, et al.
Published: (2017)
by: A. P. Savelev, et al.
Published: (2017)
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
by: Iliash, S.A., et al.
Published: (2016)
by: Iliash, S.A., et al.
Published: (2016)
Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
by: Zhuchenko, Z.Ya., et al.
Published: (1999)
by: Zhuchenko, Z.Ya., et al.
Published: (1999)
Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: M. M. Vinoslavskii, et al.
Published: (2018)
by: M. M. Vinoslavskii, et al.
Published: (2018)
Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: Vinoslavskii, M.M., et al.
Published: (2018)
by: Vinoslavskii, M.M., et al.
Published: (2018)
Similar Items
-
Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing
by: Fomin, A.V., et al.
Published: (2017) -
Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing
by: G. A. Pashchenko, et al.
Published: (2015) -
Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing
by: Pashchenko, G.A., et al.
Published: (2015) -
Balance model for contactless chemo-mechanical polishing of wafers
by: Grigoriev, N.N., et al.
Published: (2002) -
Chemical polishing of InAs, InSb, GaAs and GaSb
by: Levchenko, I.V., et al.
Published: (2017)