APA (7th ed.) Citation

Borblik, V. L., Shwarts, Y. M., Shwarts, M. M., & Aleinikov, A. B. (2017). New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures.

Chicago Style (17th ed.) Citation

Borblik, V. L., Yu. M. Shwarts, M. M. Shwarts, and A. B. Aleinikov. New Evidence of the Hopping Nature of the Excess Tunnel Current in Heavily Doped Silicon P-n Diodes at Cryogenic Temperatures. 2017.

MLA (8th ed.) Citation

Borblik, V. L., et al. New Evidence of the Hopping Nature of the Excess Tunnel Current in Heavily Doped Silicon P-n Diodes at Cryogenic Temperatures. 2017.

Warning: These citations may not always be 100% accurate.