Borblik, V. L., Shwarts, Y. M., Shwarts, M. M., & Aleinikov, A. B. (2017). New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures.
Chicago-Zitierstil (17. Ausg.)Borblik, V. L., Yu. M. Shwarts, M. M. Shwarts, und A. B. Aleinikov. New Evidence of the Hopping Nature of the Excess Tunnel Current in Heavily Doped Silicon P-n Diodes at Cryogenic Temperatures. 2017.
MLA-Zitierstil (8. Ausg.)Borblik, V. L., et al. New Evidence of the Hopping Nature of the Excess Tunnel Current in Heavily Doped Silicon P-n Diodes at Cryogenic Temperatures. 2017.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.