New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
Збережено в:
| Дата: | 2017 |
|---|---|
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2017
|
| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000741624 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859509234180292608 |
|---|---|
| author | V. L. Borblik Yu. M. Shwarts M. M. Shwarts A. B. Aleinikov |
| author_facet | V. L. Borblik Yu. M. Shwarts M. M. Shwarts A. B. Aleinikov |
| author_sort | V. L. Borblik |
| collection | Open-Science |
| first_indexed | 2025-07-17T18:32:20Z |
| format | Article |
| id | open-sciencenbuvgovua-37215 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T18:32:20Z |
| publishDate | 2017 |
| record_format | dspace |
| series | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spelling | open-sciencenbuvgovua-372152024-02-29T11:36:03Z New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures V. L. Borblik Yu. M. Shwarts M. M. Shwarts A. B. Aleinikov 1560-8034 2017 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000741624 Article |
| spellingShingle | Semiconductor Physics, Quantum Electronics and Optoelectronics V. L. Borblik Yu. M. Shwarts M. M. Shwarts A. B. Aleinikov New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures |
| title | New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures |
| title_full | New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures |
| title_fullStr | New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures |
| title_full_unstemmed | New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures |
| title_short | New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures |
| title_sort | new evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000741624 |
| work_keys_str_mv | AT vlborblik newevidenceofthehoppingnatureoftheexcesstunnelcurrentinheavilydopedsiliconpndiodesatcryogenictemperatures AT yumshwarts newevidenceofthehoppingnatureoftheexcesstunnelcurrentinheavilydopedsiliconpndiodesatcryogenictemperatures AT mmshwarts newevidenceofthehoppingnatureoftheexcesstunnelcurrentinheavilydopedsiliconpndiodesatcryogenictemperatures AT abaleinikov newevidenceofthehoppingnatureoftheexcesstunnelcurrentinheavilydopedsiliconpndiodesatcryogenictemperatures |