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New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures

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Bibliographic Details
Date:	2017
Main Authors:	V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts, A. B. Aleinikov
Format:	Article
Language:	English
Published:	2017
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000741624
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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