New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
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| Date: | 2017 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
2017
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| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000741624 |
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| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |