Gladkovskij, V. V., & Fedorovich, O. A. (2017). Investigation of the influence of oxygen on the rate and anisotropy of deep etching of silicon in the plasma-chemical reactor with the controlled magnetic field.
Chicago Style (17th ed.) CitationGladkovskij, V. V., and O. A. Fedorovich. Investigation of the Influence of Oxygen on the Rate and Anisotropy of Deep Etching of Silicon in the Plasma-chemical Reactor with the Controlled Magnetic Field. 2017.
MLA (8th ed.) CitationGladkovskij, V. V., and O. A. Fedorovich. Investigation of the Influence of Oxygen on the Rate and Anisotropy of Deep Etching of Silicon in the Plasma-chemical Reactor with the Controlled Magnetic Field. 2017.
Warning: These citations may not always be 100% accurate.