Investigation of the influence of oxygen on the rate and anisotropy of deep etching of silicon in the plasma-chemical reactor with the controlled magnetic field
Збережено в:
| Дата: | 2017 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2017
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| Назва видання: | Technology and design in electronic equipment |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000798647 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-39260 |
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| record_format |
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| spelling |
open-sciencenbuvgovua-392602024-02-29T11:45:12Z Investigation of the influence of oxygen on the rate and anisotropy of deep etching of silicon in the plasma-chemical reactor with the controlled magnetic field V. V. Gladkovskij O. A. Fedorovich 2225-5818 2017 en Technology and design in electronic equipment http://jnas.nbuv.gov.ua/article/UJRN-0000798647 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Technology and design in electronic equipment |
| spellingShingle |
Technology and design in electronic equipment V. V. Gladkovskij O. A. Fedorovich Investigation of the influence of oxygen on the rate and anisotropy of deep etching of silicon in the plasma-chemical reactor with the controlled magnetic field |
| format |
Article |
| author |
V. V. Gladkovskij O. A. Fedorovich |
| author_facet |
V. V. Gladkovskij O. A. Fedorovich |
| author_sort |
V. V. Gladkovskij |
| title |
Investigation of the influence of oxygen on the rate and anisotropy of deep etching of silicon in the plasma-chemical reactor with the controlled magnetic field |
| title_short |
Investigation of the influence of oxygen on the rate and anisotropy of deep etching of silicon in the plasma-chemical reactor with the controlled magnetic field |
| title_full |
Investigation of the influence of oxygen on the rate and anisotropy of deep etching of silicon in the plasma-chemical reactor with the controlled magnetic field |
| title_fullStr |
Investigation of the influence of oxygen on the rate and anisotropy of deep etching of silicon in the plasma-chemical reactor with the controlled magnetic field |
| title_full_unstemmed |
Investigation of the influence of oxygen on the rate and anisotropy of deep etching of silicon in the plasma-chemical reactor with the controlled magnetic field |
| title_sort |
investigation of the influence of oxygen on the rate and anisotropy of deep etching of silicon in the plasma-chemical reactor with the controlled magnetic field |
| publishDate |
2017 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000798647 |
| work_keys_str_mv |
AT vvgladkovskij investigationoftheinfluenceofoxygenontherateandanisotropyofdeepetchingofsiliconintheplasmachemicalreactorwiththecontrolledmagneticfield AT oafedorovich investigationoftheinfluenceofoxygenontherateandanisotropyofdeepetchingofsiliconintheplasmachemicalreactorwiththecontrolledmagneticfield |
| first_indexed |
2024-03-30T09:14:59Z |
| last_indexed |
2024-03-30T09:14:59Z |
| _version_ |
1796881368516395008 |