Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode

Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode

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Bibliographic Details
Date:2017
Main Authors: B. V. Chernyshov, R. V. Holovashchenko, V. M. Derkach, S. I. Tarapov
Format: Article
Language:English
Published: 2017
Series:Radiophysics and Electronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000813610
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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-399362024-02-29T11:48:22Z Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode B. V. Chernyshov R. V. Holovashchenko V. M. Derkach S. I. Tarapov 1028-821X 2017 en Radiophysics and Electronics http://jnas.nbuv.gov.ua/article/UJRN-0000813610 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Radiophysics and Electronics
spellingShingle Radiophysics and Electronics
B. V. Chernyshov
R. V. Holovashchenko
V. M. Derkach
S. I. Tarapov
Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode
format Article
author B. V. Chernyshov
R. V. Holovashchenko
V. M. Derkach
S. I. Tarapov
author_facet B. V. Chernyshov
R. V. Holovashchenko
V. M. Derkach
S. I. Tarapov
author_sort B. V. Chernyshov
title Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode
title_short Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode
title_full Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode
title_fullStr Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode
title_full_unstemmed Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode
title_sort method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode
publishDate 2017
url http://jnas.nbuv.gov.ua/article/UJRN-0000813610
work_keys_str_mv AT bvchernyshov methodofmeasuringnonequilibriumcarriersconcentrationandtheirlifetimeinasemiconductorusingtheapproachofaphotoniccrystalwithadefectmode
AT rvholovashchenko methodofmeasuringnonequilibriumcarriersconcentrationandtheirlifetimeinasemiconductorusingtheapproachofaphotoniccrystalwithadefectmode
AT vmderkach methodofmeasuringnonequilibriumcarriersconcentrationandtheirlifetimeinasemiconductorusingtheapproachofaphotoniccrystalwithadefectmode
AT sitarapov methodofmeasuringnonequilibriumcarriersconcentrationandtheirlifetimeinasemiconductorusingtheapproachofaphotoniccrystalwithadefectmode
first_indexed 2025-07-17T19:28:01Z
last_indexed 2025-07-17T19:28:01Z
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