Investigations of the deep-level parameters in semiconductors

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Bibliographic Details
Date:	2017
Main Author:	I. G. Tursunov
Format:	Article
Language:	English
Published:	2017
Series:	Ukrainian journal of physics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000816992
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

id	open-sciencenbuvgovua-40189
record_format	dspace
spelling	open-sciencenbuvgovua-401892024-02-29T11:49:17Z Investigations of the deep-level parameters in semiconductors I. G. Tursunov 2071-0186 2017 en Ukrainian journal of physics http://jnas.nbuv.gov.ua/article/UJRN-0000816992 Article
institution	Library portal of National Academy of Sciences of Ukraine \| LibNAS
collection	Open-Science
language	English
series	Ukrainian journal of physics
spellingShingle	Ukrainian journal of physics I. G. Tursunov Investigations of the deep-level parameters in semiconductors
format	Article
author	I. G. Tursunov
author_facet	I. G. Tursunov
author_sort	I. G. Tursunov
title	Investigations of the deep-level parameters in semiconductors
title_short	Investigations of the deep-level parameters in semiconductors
title_full	Investigations of the deep-level parameters in semiconductors
title_fullStr	Investigations of the deep-level parameters in semiconductors
title_full_unstemmed	Investigations of the deep-level parameters in semiconductors
title_sort	investigations of the deep-level parameters in semiconductors
publishDate	2017
url	http://jnas.nbuv.gov.ua/article/UJRN-0000816992
work_keys_str_mv	AT igtursunov investigationsofthedeeplevelparametersinsemiconductors
first_indexed	2025-07-17T19:32:08Z
last_indexed	2025-07-17T19:32:08Z
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