Investigations of the deep-level parameters in semiconductors

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Bibliographic Details
Date:	2017
Main Author:	I. G. Tursunov
Format:	Article
Language:	English
Published:	2017
Series:	Ukrainian Journal of Physics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000818564
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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spelling	open-sciencenbuvgovua-402252024-02-29T11:49:28Z Investigations of the deep-level parameters in semiconductors I. G. Tursunov 0372-400X 2017 en Ukrainian Journal of Physics http://jnas.nbuv.gov.ua/article/UJRN-0000818564 Article
institution	Library portal of National Academy of Sciences of Ukraine \| LibNAS
collection	Open-Science
language	English
series	Ukrainian Journal of Physics
spellingShingle	Ukrainian Journal of Physics I. G. Tursunov Investigations of the deep-level parameters in semiconductors
format	Article
author	I. G. Tursunov
author_facet	I. G. Tursunov
author_sort	I. G. Tursunov
title	Investigations of the deep-level parameters in semiconductors
title_short	Investigations of the deep-level parameters in semiconductors
title_full	Investigations of the deep-level parameters in semiconductors
title_fullStr	Investigations of the deep-level parameters in semiconductors
title_full_unstemmed	Investigations of the deep-level parameters in semiconductors
title_sort	investigations of the deep-level parameters in semiconductors
publishDate	2017
url	http://jnas.nbuv.gov.ua/article/UJRN-0000818564
work_keys_str_mv	AT igtursunov investigationsofthedeeplevelparametersinsemiconductors
first_indexed	2025-07-17T19:33:29Z
last_indexed	2025-07-17T19:33:29Z
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