Investigations of the deep-level parameters in semiconductors

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Datum:2017
1. Verfasser: I. G. Tursunov
Format: Artikel
Sprache:Englisch
Veröffentlicht: 2017
Schriftenreihe:Ukrainian Journal of Physics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000818564
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author I. G. Tursunov
author_facet I. G. Tursunov
author_sort I. G. Tursunov
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institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
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spelling open-sciencenbuvgovua-402252024-02-29T11:49:28Z Investigations of the deep-level parameters in semiconductors I. G. Tursunov 0372-400X 2017 en Ukrainian Journal of Physics http://jnas.nbuv.gov.ua/article/UJRN-0000818564 Article
spellingShingle Ukrainian Journal of Physics
I. G. Tursunov
Investigations of the deep-level parameters in semiconductors
title Investigations of the deep-level parameters in semiconductors
title_full Investigations of the deep-level parameters in semiconductors
title_fullStr Investigations of the deep-level parameters in semiconductors
title_full_unstemmed Investigations of the deep-level parameters in semiconductors
title_short Investigations of the deep-level parameters in semiconductors
title_sort investigations of the deep-level parameters in semiconductors
url http://jnas.nbuv.gov.ua/article/UJRN-0000818564
work_keys_str_mv AT igtursunov investigationsofthedeeplevelparametersinsemiconductors