Ponomaryov, S. S., Yukhymchuk, V. O., & Valakh, Y. (2016). Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy.
Чикаго стиль цитування (17-те видання)Ponomaryov, S. S., V. O. Yukhymchuk, та Ya Valakh. Drift Correction of the Analyzed Area During the Study of the Lateral Elemental Composition Distribution in Single Semiconductor Nanostructures by Scanning Auger Microscopy. 2016.
Стиль цитування MLA (8-ме видання)Ponomaryov, S. S., et al. Drift Correction of the Analyzed Area During the Study of the Lateral Elemental Composition Distribution in Single Semiconductor Nanostructures by Scanning Auger Microscopy. 2016.
Попередження: стилі цитування не завжди правильні на всі 100%.