The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime

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Datum:2016
Hauptverfasser: A. V. Sachenko, V. P. Kostylyov, V. M. Vlasiuk, I. O. Sokolovskyi, M. Evstigneev
Format: Artikel
Sprache:Englisch
Veröffentlicht: 2016
Schriftenreihe:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000714435
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author A. V. Sachenko
V. P. Kostylyov
V. M. Vlasiuk
I. O. Sokolovskyi
M. Evstigneev
author_facet A. V. Sachenko
V. P. Kostylyov
V. M. Vlasiuk
I. O. Sokolovskyi
M. Evstigneev
author_sort A. V. Sachenko
collection Open-Science
first_indexed 2025-07-17T22:57:53Z
format Article
id open-sciencenbuvgovua-52157
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
last_indexed 2025-07-17T22:57:53Z
publishDate 2016
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series Semiconductor Physics, Quantum Electronics and Optoelectronics
spelling open-sciencenbuvgovua-521572024-02-29T13:04:54Z The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime A. V. Sachenko V. P. Kostylyov V. M. Vlasiuk I. O. Sokolovskyi M. Evstigneev 1560-8034 2016 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000714435 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
A. V. Sachenko
V. P. Kostylyov
V. M. Vlasiuk
I. O. Sokolovskyi
M. Evstigneev
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime
title The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime
title_full The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime
title_fullStr The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime
title_full_unstemmed The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime
title_short The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime
title_sort influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. the case of a long shockley–read–hall lifetime
url http://jnas.nbuv.gov.ua/article/UJRN-0000714435
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