Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)

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Datum:2016
Hauptverfasser: P. V. Parphenyuk, A. A. Evtukh
Format: Artikel
Sprache:English
Veröffentlicht: 2016
Schriftenreihe:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000714525
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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-521932024-02-29T13:05:10Z Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) P. V. Parphenyuk A. A. Evtukh 1560-8034 2016 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000714525 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
P. V. Parphenyuk
A. A. Evtukh
Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
format Article
author P. V. Parphenyuk
A. A. Evtukh
author_facet P. V. Parphenyuk
A. A. Evtukh
author_sort P. V. Parphenyuk
title Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
title_short Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
title_full Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
title_fullStr Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
title_full_unstemmed Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
title_sort lowering the density of dislocations in heteroepitaxial iii-nitride layers: effect of sapphire substrate treatment (review)
publishDate 2016
url http://jnas.nbuv.gov.ua/article/UJRN-0000714525
work_keys_str_mv AT pvparphenyuk loweringthedensityofdislocationsinheteroepitaxialiiinitridelayerseffectofsapphiresubstratetreatmentreview
AT aaevtukh loweringthedensityofdislocationsinheteroepitaxialiiinitridelayerseffectofsapphiresubstratetreatmentreview
first_indexed 2025-07-17T22:58:18Z
last_indexed 2025-07-17T22:58:18Z
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