Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
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| Datum: | 2016 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
2016
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| Schriftenreihe: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0000714525 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859516196353736704 |
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| author | P. V. Parphenyuk A. A. Evtukh |
| author_facet | P. V. Parphenyuk A. A. Evtukh |
| author_sort | P. V. Parphenyuk |
| collection | Open-Science |
| first_indexed | 2025-07-17T22:58:18Z |
| format | Article |
| id | open-sciencenbuvgovua-52193 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T22:58:18Z |
| publishDate | 2016 |
| record_format | dspace |
| series | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spelling | open-sciencenbuvgovua-521932024-02-29T13:05:10Z Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) P. V. Parphenyuk A. A. Evtukh 1560-8034 2016 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000714525 Article |
| spellingShingle | Semiconductor Physics, Quantum Electronics and Optoelectronics P. V. Parphenyuk A. A. Evtukh Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) |
| title | Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) |
| title_full | Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) |
| title_fullStr | Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) |
| title_full_unstemmed | Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) |
| title_short | Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) |
| title_sort | lowering the density of dislocations in heteroepitaxial iii-nitride layers: effect of sapphire substrate treatment (review) |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000714525 |
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