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Features of tensoresistance in single crystals of germanium and silicon with different dopants

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Bibliographic Details
Date:	2016
Main Authors:	P. I. Baranskii, G. P. Gaidar
Format:	Article
Language:	English
Published:	2016
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000714531
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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