Raman scattering in the process of tin-induced crystallization of amorphous silicon

Збережено в:
Бібліографічні деталі
Дата:2016
Автори: V. Neimash, G. Dovbeshko, P. Shepelyavyi, V. Danko, V. Melnyk, M. Isaiev, A. Kuzmich
Формат: Стаття
Мова:Англійська
Опубліковано: 2016
Назва видання:Ukrainian journal of physics
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000721082
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author V. Neimash
G. Dovbeshko
P. Shepelyavyi
V. Danko
V. Melnyk
M. Isaiev
A. Kuzmich
author_facet V. Neimash
G. Dovbeshko
P. Shepelyavyi
V. Danko
V. Melnyk
M. Isaiev
A. Kuzmich
author_sort V. Neimash
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institution Library portal of National Academy of Sciences of Ukraine | LibNAS
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publishDate 2016
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series Ukrainian journal of physics
spelling open-sciencenbuvgovua-522302024-02-29T13:05:26Z Raman scattering in the process of tin-induced crystallization of amorphous silicon V. Neimash G. Dovbeshko P. Shepelyavyi V. Danko V. Melnyk M. Isaiev A. Kuzmich 2071-0186 2016 en Ukrainian journal of physics http://jnas.nbuv.gov.ua/article/UJRN-0000721082 Article
spellingShingle Ukrainian journal of physics
V. Neimash
G. Dovbeshko
P. Shepelyavyi
V. Danko
V. Melnyk
M. Isaiev
A. Kuzmich
Raman scattering in the process of tin-induced crystallization of amorphous silicon
title Raman scattering in the process of tin-induced crystallization of amorphous silicon
title_full Raman scattering in the process of tin-induced crystallization of amorphous silicon
title_fullStr Raman scattering in the process of tin-induced crystallization of amorphous silicon
title_full_unstemmed Raman scattering in the process of tin-induced crystallization of amorphous silicon
title_short Raman scattering in the process of tin-induced crystallization of amorphous silicon
title_sort raman scattering in the process of tin-induced crystallization of amorphous silicon
url http://jnas.nbuv.gov.ua/article/UJRN-0000721082
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AT vmelnyk ramanscatteringintheprocessoftininducedcrystallizationofamorphoussilicon
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