Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films

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Бібліографічні деталі
Дата:2016
Автори: V. V. Ilchenko, O. M. Kostiukevych, V. V. Lendiel, V. I. Radko, N. S. Holoborodko
Формат: Стаття
Мова:English
Опубліковано: 2016
Назва видання:Ukrainian Journal of Physics
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000727701
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-524132024-02-29T13:06:28Z Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films V. V. Ilchenko O. M. Kostiukevych V. V. Lendiel V. I. Radko N. S. Holoborodko 0372-400X 2016 en Ukrainian Journal of Physics http://jnas.nbuv.gov.ua/article/UJRN-0000727701 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Ukrainian Journal of Physics
spellingShingle Ukrainian Journal of Physics
V. V. Ilchenko
O. M. Kostiukevych
V. V. Lendiel
V. I. Radko
N. S. Holoborodko
Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films
format Article
author V. V. Ilchenko
O. M. Kostiukevych
V. V. Lendiel
V. I. Radko
N. S. Holoborodko
author_facet V. V. Ilchenko
O. M. Kostiukevych
V. V. Lendiel
V. I. Radko
N. S. Holoborodko
author_sort V. V. Ilchenko
title Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films
title_short Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films
title_full Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films
title_fullStr Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films
title_full_unstemmed Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films
title_sort effect of gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% in2o3 + 5% sno2) oxide films
publishDate 2016
url http://jnas.nbuv.gov.ua/article/UJRN-0000727701
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first_indexed 2024-03-30T10:17:17Z
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