Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films
Saved in:
| Date: | 2016 |
|---|---|
| Main Authors: | V. V. Ilchenko, O. M. Kostiukevych, V. V. Lendiel, V. I. Radko, N. S. Goloborodko |
| Format: | Article |
| Language: | English |
| Published: |
2016
|
| Series: | Ukrainian journal of physics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000727778 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films
by: V. V. Ilchenko, et al.
Published: (2016) -
Optical and electrophysical properties of 95% In2O3 + 5% SnO2/ns-Si heterostructure
by: V. A. Vinichenko, et al.
Published: (2016) -
Optical and electrophysical properties of 95% In2O3 + 5% SnO2/ns-Si heterostructure
by: V. A. Vynychenko, et al.
Published: (2016) -
Про механiзм впливу газового середовища на електрофiзичнi параметри гетероструктур на основi бар’єра Шотткi з наноструктурованими плiвками складу (95% In2O3 + 5% SnO2)
by: Il'chenko, V. V., et al.
Published: (2019) -
Оптичнi та електрофiзичнi властивостi гетероструктури 95% In2O3 + 5% SnO2/ns-Si
by: Vinichenko, V. A., et al.
Published: (2019)