APA (7th ed.) Citation

Haidar, H. P., & Baranskyi, P. I. (2016). Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals.

Chicago Style (17th ed.) Citation

Haidar, H. P., and P. I. Baranskyi. Influence of Ge Isovalent Impurity and Thermoannealings on the Electrophysical Properties of Silicon Crystals. 2016.

MLA (8th ed.) Citation

Haidar, H. P., and P. I. Baranskyi. Influence of Ge Isovalent Impurity and Thermoannealings on the Electrophysical Properties of Silicon Crystals. 2016.

Warning: These citations may not always be 100% accurate.