Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals
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| Datum: | 2016 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
2016
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| Schriftenreihe: | Reports of the National Academy of Sciences of Ukraine |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0000816047 |
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open-sciencenbuvgovua-542982024-02-29T13:15:15Z Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals H. P. Haidar P. I. Baranskyi 1025-6415 2016 en Reports of the National Academy of Sciences of Ukraine http://jnas.nbuv.gov.ua/article/UJRN-0000816047 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Reports of the National Academy of Sciences of Ukraine |
| spellingShingle |
Reports of the National Academy of Sciences of Ukraine H. P. Haidar P. I. Baranskyi Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| format |
Article |
| author |
H. P. Haidar P. I. Baranskyi |
| author_facet |
H. P. Haidar P. I. Baranskyi |
| author_sort |
H. P. Haidar |
| title |
Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| title_short |
Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| title_full |
Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| title_fullStr |
Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| title_full_unstemmed |
Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| title_sort |
influence of ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| publishDate |
2016 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000816047 |
| work_keys_str_mv |
AT hphaidar influenceofgeisovalentimpurityandthermoannealingsontheelectrophysicalpropertiesofsiliconcrystals AT pibaranskyi influenceofgeisovalentimpurityandthermoannealingsontheelectrophysicalpropertiesofsiliconcrystals |
| first_indexed |
2025-07-17T23:43:09Z |
| last_indexed |
2025-07-17T23:43:09Z |
| _version_ |
1850416925996220416 |