2025-02-23T00:33:02-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22open-sciencenbuvgovua-54298%22&qt=morelikethis&rows=5
2025-02-23T00:33:02-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22open-sciencenbuvgovua-54298%22&qt=morelikethis&rows=5
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Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals

Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals

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Bibliographic Details
Main Authors: H. P. Haidar, P. I. Baranskyi
Format: Article
Language:English
Published: 2016
Series:Reports of the National Academy of Sciences of Ukraine
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000816047
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spelling open-sciencenbuvgovua-542982024-02-29T13:15:15Z Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals H. P. Haidar P. I. Baranskyi 1025-6415 2016 en Reports of the National Academy of Sciences of Ukraine http://jnas.nbuv.gov.ua/article/UJRN-0000816047 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Reports of the National Academy of Sciences of Ukraine
spellingShingle Reports of the National Academy of Sciences of Ukraine
H. P. Haidar
P. I. Baranskyi
Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals
format Article
author H. P. Haidar
P. I. Baranskyi
author_facet H. P. Haidar
P. I. Baranskyi
author_sort H. P. Haidar
title Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals
title_short Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals
title_full Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals
title_fullStr Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals
title_full_unstemmed Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals
title_sort influence of ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals
publishDate 2016
url http://jnas.nbuv.gov.ua/article/UJRN-0000816047
work_keys_str_mv AT hphaidar influenceofgeisovalentimpurityandthermoannealingsontheelectrophysicalpropertiesofsiliconcrystals
AT pibaranskyi influenceofgeisovalentimpurityandthermoannealingsontheelectrophysicalpropertiesofsiliconcrystals
first_indexed 2024-03-30T10:25:36Z
last_indexed 2024-03-30T10:25:36Z
_version_ 1796882939589427200

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