Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals
Збережено в:
| Дата: | 2016 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2016
|
| Назва видання: | Reports of the National Academy of Sciences of Ukraine |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000816047 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-54298 |
|---|---|
| record_format |
dspace |
| spelling |
open-sciencenbuvgovua-542982024-02-29T13:15:15Z Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals H. P. Haidar P. I. Baranskyi 1025-6415 2016 en Reports of the National Academy of Sciences of Ukraine http://jnas.nbuv.gov.ua/article/UJRN-0000816047 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Reports of the National Academy of Sciences of Ukraine |
| spellingShingle |
Reports of the National Academy of Sciences of Ukraine H. P. Haidar P. I. Baranskyi Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| format |
Article |
| author |
H. P. Haidar P. I. Baranskyi |
| author_facet |
H. P. Haidar P. I. Baranskyi |
| author_sort |
H. P. Haidar |
| title |
Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| title_short |
Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| title_full |
Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| title_fullStr |
Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| title_full_unstemmed |
Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| title_sort |
influence of ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| publishDate |
2016 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000816047 |
| work_keys_str_mv |
AT hphaidar influenceofgeisovalentimpurityandthermoannealingsontheelectrophysicalpropertiesofsiliconcrystals AT pibaranskyi influenceofgeisovalentimpurityandthermoannealingsontheelectrophysicalpropertiesofsiliconcrystals |
| first_indexed |
2024-03-30T10:25:36Z |
| last_indexed |
2024-03-30T10:25:36Z |
| _version_ |
1796882939589427200 |