Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals
Збережено в:
| Дата: | 2016 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2016
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| Назва видання: | Reports of the National Academy of Sciences of Ukraine |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000816047 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859517768685060096 |
|---|---|
| author | H. P. Haidar P. I. Baranskyi |
| author_facet | H. P. Haidar P. I. Baranskyi |
| author_sort | H. P. Haidar |
| collection | Open-Science |
| first_indexed | 2025-07-17T23:43:09Z |
| format | Article |
| id | open-sciencenbuvgovua-54298 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T23:43:09Z |
| publishDate | 2016 |
| record_format | dspace |
| series | Reports of the National Academy of Sciences of Ukraine |
| spelling | open-sciencenbuvgovua-542982024-02-29T13:15:15Z Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals H. P. Haidar P. I. Baranskyi 1025-6415 2016 en Reports of the National Academy of Sciences of Ukraine http://jnas.nbuv.gov.ua/article/UJRN-0000816047 Article |
| spellingShingle | Reports of the National Academy of Sciences of Ukraine H. P. Haidar P. I. Baranskyi Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| title | Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| title_full | Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| title_fullStr | Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| title_full_unstemmed | Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| title_short | Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| title_sort | influence of ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000816047 |
| work_keys_str_mv | AT hphaidar influenceofgeisovalentimpurityandthermoannealingsontheelectrophysicalpropertiesofsiliconcrystals AT pibaranskyi influenceofgeisovalentimpurityandthermoannealingsontheelectrophysicalpropertiesofsiliconcrystals |