Magnetotenso- and tensomagnetoresistance of n-Ge
Збережено в:
| Дата: | 2016 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2016
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| Назва видання: | Optoelectronics and Semiconductor Technique |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0001007752 |
| Теги: |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859518824673443840 |
|---|---|
| author | P. I. Baranskyi H. P. Haidar |
| author_facet | P. I. Baranskyi H. P. Haidar |
| author_sort | P. I. Baranskyi |
| collection | Open-Science |
| first_indexed | 2025-07-18T00:08:17Z |
| format | Article |
| id | open-sciencenbuvgovua-55565 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-18T00:08:17Z |
| publishDate | 2016 |
| record_format | dspace |
| series | Optoelectronics and Semiconductor Technique |
| spelling | open-sciencenbuvgovua-555652024-02-29T13:21:06Z Magnetotenso- and tensomagnetoresistance of n-Ge P. I. Baranskyi H. P. Haidar 2707-6806 2016 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0001007752 Article |
| spellingShingle | Optoelectronics and Semiconductor Technique P. I. Baranskyi H. P. Haidar Magnetotenso- and tensomagnetoresistance of n-Ge |
| title | Magnetotenso- and tensomagnetoresistance of n-Ge |
| title_full | Magnetotenso- and tensomagnetoresistance of n-Ge |
| title_fullStr | Magnetotenso- and tensomagnetoresistance of n-Ge |
| title_full_unstemmed | Magnetotenso- and tensomagnetoresistance of n-Ge |
| title_short | Magnetotenso- and tensomagnetoresistance of n-Ge |
| title_sort | magnetotenso- and tensomagnetoresistance of n-ge |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0001007752 |
| work_keys_str_mv | AT pibaranskyi magnetotensoandtensomagnetoresistanceofnge AT hphaidar magnetotensoandtensomagnetoresistanceofnge |