Magnetotenso- and tensomagnetoresistance of n-Ge

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Bibliographic Details
Date:2016
Main Authors: P. I. Baranskyi, H. P. Haidar
Format: Article
Language:English
Published: 2016
Series:Optoelectronics and Semiconductor Technique
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0001007752
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Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author P. I. Baranskyi
H. P. Haidar
author_facet P. I. Baranskyi
H. P. Haidar
author_sort P. I. Baranskyi
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institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
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publishDate 2016
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series Optoelectronics and Semiconductor Technique
spelling open-sciencenbuvgovua-555652024-02-29T13:21:06Z Magnetotenso- and tensomagnetoresistance of n-Ge P. I. Baranskyi H. P. Haidar 2707-6806 2016 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0001007752 Article
spellingShingle Optoelectronics and Semiconductor Technique
P. I. Baranskyi
H. P. Haidar
Magnetotenso- and tensomagnetoresistance of n-Ge
title Magnetotenso- and tensomagnetoresistance of n-Ge
title_full Magnetotenso- and tensomagnetoresistance of n-Ge
title_fullStr Magnetotenso- and tensomagnetoresistance of n-Ge
title_full_unstemmed Magnetotenso- and tensomagnetoresistance of n-Ge
title_short Magnetotenso- and tensomagnetoresistance of n-Ge
title_sort magnetotenso- and tensomagnetoresistance of n-ge
url http://jnas.nbuv.gov.ua/article/UJRN-0001007752
work_keys_str_mv AT pibaranskyi magnetotensoandtensomagnetoresistanceofnge
AT hphaidar magnetotensoandtensomagnetoresistanceofnge