Magnetotenso- and tensomagnetoresistance of n-Ge

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Bibliographic Details
Date:	2016
Main Authors:	P. I. Baranskyi, H. P. Haidar
Format:	Article
Language:	English
Published:	2016
Series:	Optoelectronics and Semiconductor Technique
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0001007752
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

id	open-sciencenbuvgovua-55565
record_format	dspace
spelling	open-sciencenbuvgovua-555652024-02-29T13:21:06Z Magnetotenso- and tensomagnetoresistance of n-Ge P. I. Baranskyi H. P. Haidar 2707-6806 2016 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0001007752 Article
institution	Library portal of National Academy of Sciences of Ukraine \| LibNAS
collection	Open-Science
language	English
series	Optoelectronics and Semiconductor Technique
spellingShingle	Optoelectronics and Semiconductor Technique P. I. Baranskyi H. P. Haidar Magnetotenso- and tensomagnetoresistance of n-Ge
format	Article
author	P. I. Baranskyi H. P. Haidar
author_facet	P. I. Baranskyi H. P. Haidar
author_sort	P. I. Baranskyi
title	Magnetotenso- and tensomagnetoresistance of n-Ge
title_short	Magnetotenso- and tensomagnetoresistance of n-Ge
title_full	Magnetotenso- and tensomagnetoresistance of n-Ge
title_fullStr	Magnetotenso- and tensomagnetoresistance of n-Ge
title_full_unstemmed	Magnetotenso- and tensomagnetoresistance of n-Ge
title_sort	magnetotenso- and tensomagnetoresistance of n-ge
publishDate	2016
url	http://jnas.nbuv.gov.ua/article/UJRN-0001007752
work_keys_str_mv	AT pibaranskyi magnetotensoandtensomagnetoresistanceofnge AT hphaidar magnetotensoandtensomagnetoresistanceofnge
first_indexed	2025-07-18T00:08:17Z
last_indexed	2025-07-18T00:08:17Z
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