Diode structures and electrical properties of ZnO films grown using the atomic layer deposition method

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Бібліографічні деталі
Дата:2016
Автор: T. V. Semikina
Формат: Стаття
Мова:Англійська
Опубліковано: 2016
Назва видання:Optoelectronics and Semiconductor Technique
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0001007755
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author T. V. Semikina
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spelling open-sciencenbuvgovua-555682024-02-29T13:21:06Z Diode structures and electrical properties of ZnO films grown using the atomic layer deposition method T. V. Semikina 2707-6806 2016 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0001007755 Article
spellingShingle Optoelectronics and Semiconductor Technique
T. V. Semikina
Diode structures and electrical properties of ZnO films grown using the atomic layer deposition method
title Diode structures and electrical properties of ZnO films grown using the atomic layer deposition method
title_full Diode structures and electrical properties of ZnO films grown using the atomic layer deposition method
title_fullStr Diode structures and electrical properties of ZnO films grown using the atomic layer deposition method
title_full_unstemmed Diode structures and electrical properties of ZnO films grown using the atomic layer deposition method
title_short Diode structures and electrical properties of ZnO films grown using the atomic layer deposition method
title_sort diode structures and electrical properties of zno films grown using the atomic layer deposition method
url http://jnas.nbuv.gov.ua/article/UJRN-0001007755
work_keys_str_mv AT tvsemikina diodestructuresandelectricalpropertiesofznofilmsgrownusingtheatomiclayerdepositionmethod