Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings
Збережено в:
| Дата: | 2015 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2015
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| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000353233 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859520007437811712 |
|---|---|
| author | G. P. Gaidar |
| author_facet | G. P. Gaidar |
| author_sort | G. P. Gaidar |
| collection | Open-Science |
| first_indexed | 2025-07-18T00:51:00Z |
| format | Article |
| id | open-sciencenbuvgovua-57388 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-18T00:51:00Z |
| publishDate | 2015 |
| record_format | dspace |
| series | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spelling | open-sciencenbuvgovua-573882024-04-16T12:33:34Z Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings G. P. Gaidar 1560-8034 2015 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000353233 Article |
| spellingShingle | Semiconductor Physics, Quantum Electronics and Optoelectronics G. P. Gaidar Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title | Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_full | Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_fullStr | Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_full_unstemmed | Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_short | Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_sort | changes in electrophysical properties of heavily doped n-ge <as> single crystals under the influence of thermoannealings |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000353233 |
| work_keys_str_mv | AT gpgaidar changesinelectrophysicalpropertiesofheavilydopedngeampltasampgtsinglecrystalsundertheinfluenceofthermoannealings |