2025-02-22T17:13:59-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22open-sciencenbuvgovua-57388%22&qt=morelikethis&rows=5
2025-02-22T17:13:59-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22open-sciencenbuvgovua-57388%22&qt=morelikethis&rows=5
2025-02-22T17:13:59-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T17:13:59-05:00 DEBUG: Deserialized SOLR response
Changes in electrophysical properties of heavily doped n-Ge &lt;As&gt; single crystals under the influence of thermoannealings

Changes in electrophysical properties of heavily doped n-Ge &lt;As&gt; single crystals under the influence of thermoannealings

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Bibliographic Details
Main Author: G. P. Gaidar
Format: Article
Language:English
Published: 2015
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000353233
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Internet

http://jnas.nbuv.gov.ua/article/UJRN-0000353233

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