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Changes in electrophysical properties of heavily doped n-Ge &lt;As&gt; single crystals under the influence of thermoannealings

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Bibliographic Details
Date:	2015
Main Author:	G. P. Gaidar
Format:	Article
Language:	English
Published:	2015
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000353233
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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