Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings
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| Date: | 2015 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
2015
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| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000353233 |
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| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |