Influence of weak magnetic fields treatment on photoluminescence of GaN:Si

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Bibliographic Details
Date:2015
Main Author: S. M. Redko
Format: Article
Language:English
Published: 2015
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000353236
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Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author S. M. Redko
author_facet S. M. Redko
author_sort S. M. Redko
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institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
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publishDate 2015
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series Semiconductor Physics, Quantum Electronics and Optoelectronics
spelling open-sciencenbuvgovua-573912024-04-16T12:33:34Z Influence of weak magnetic fields treatment on photoluminescence of GaN:Si S. M. Redko 1560-8034 2015 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000353236 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
S. M. Redko
Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
title Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
title_full Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
title_fullStr Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
title_full_unstemmed Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
title_short Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
title_sort influence of weak magnetic fields treatment on photoluminescence of gan:si
url http://jnas.nbuv.gov.ua/article/UJRN-0000353236
work_keys_str_mv AT smredko influenceofweakmagneticfieldstreatmentonphotoluminescenceofgansi