Influence of weak magnetic fields treatment on photoluminescence of GaN:Si

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Бібліографічні деталі
Дата:2015
Автор: S. M. Redko
Формат: Стаття
Мова:Англійська
Опубліковано: 2015
Назва видання:Semiconductor Physics, Quantum Electronics and Optoelectronics
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000353236
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-573912024-04-16T12:33:34Z Influence of weak magnetic fields treatment on photoluminescence of GaN:Si S. M. Redko 1560-8034 2015 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000353236 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
S. M. Redko
Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
title Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
title_full Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
title_fullStr Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
title_full_unstemmed Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
title_short Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
title_sort influence of weak magnetic fields treatment on photoluminescence of gan:si
url http://jnas.nbuv.gov.ua/article/UJRN-0000353236
work_keys_str_mv AT smredko influenceofweakmagneticfieldstreatmentonphotoluminescenceofgansi