Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
Збережено в:
Дата: | 2015 |
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Автор: | |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
2015
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Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000353236 |
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Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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open-sciencenbuvgovua-573912024-04-16T12:33:34Z Influence of weak magnetic fields treatment on photoluminescence of GaN:Si S. M. Redko 1560-8034 2015 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000353236 Article |
institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
collection |
Open-Science |
language |
English |
series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics S. M. Redko Influence of weak magnetic fields treatment on photoluminescence of GaN:Si |
format |
Article |
author |
S. M. Redko |
author_facet |
S. M. Redko |
author_sort |
S. M. Redko |
title |
Influence of weak magnetic fields treatment on photoluminescence of GaN:Si |
title_short |
Influence of weak magnetic fields treatment on photoluminescence of GaN:Si |
title_full |
Influence of weak magnetic fields treatment on photoluminescence of GaN:Si |
title_fullStr |
Influence of weak magnetic fields treatment on photoluminescence of GaN:Si |
title_full_unstemmed |
Influence of weak magnetic fields treatment on photoluminescence of GaN:Si |
title_sort |
influence of weak magnetic fields treatment on photoluminescence of gan:si |
publishDate |
2015 |
url |
http://jnas.nbuv.gov.ua/article/UJRN-0000353236 |
work_keys_str_mv |
AT smredko influenceofweakmagneticfieldstreatmentonphotoluminescenceofgansi |
first_indexed |
2024-04-17T04:12:13Z |
last_indexed |
2024-04-17T04:12:13Z |
_version_ |
1796883262752161792 |