Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100)

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Дата:2015
Автор: S. V. Kondratenko
Формат: Стаття
Мова:Англійська
Опубліковано: 2015
Назва видання:Semiconductor Physics, Quantum Electronics and Optoelectronics
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000353241
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-573962024-04-16T12:33:34Z Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100) S. V. Kondratenko 1560-8034 2015 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000353241 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
S. V. Kondratenko
Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100)
title Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100)
title_full Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100)
title_fullStr Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100)
title_full_unstemmed Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100)
title_short Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100)
title_sort recombination of charge carriers in heterostructures with ge nanoislands grown on si(100)
url http://jnas.nbuv.gov.ua/article/UJRN-0000353241
work_keys_str_mv AT svkondratenko recombinationofchargecarriersinheterostructureswithgenanoislandsgrownonsi100