Schottky-barrier Au–TiBx–n-GaN contacts
Saved in:
| Date: | 2015 |
|---|---|
| Main Author: | Ya. Kudryk |
| Format: | Article |
| Language: | English |
| Published: |
2015
|
| Series: | Nanosystems, nanomaterials, nanotechnologies |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000454345 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
by: Belyaev, A.E., et al.
Published: (2007) -
Контакти з бар’єром Шотткі Au–TiBx–n-GaN
by: Кудрик, Р.Я.
Published: (2015) -
SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
by: Boltovets, N.S., et al.
Published: (2004) -
Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
by: Venger, E.F., et al.
Published: (1999) -
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
by: Konakova, R.V., et al.
Published: (2001)