Cover Image

Silicon p-i-n photodiode with increased pulse sensitivity

Saved in:

Bibliographic Details
Date:	2021
Main Authors:	M. S. Kukurudziak, Yu. H. Dobrovolskyi
Format:	Article
Language:	English
Published:	2021
Series:	Technology and design in electronic equipment
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0001271094
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Problems of chemical-dynamic polishing in the technology of silicon p-i-n photodiodes
by: M. S. Kukurudziak
Published: (2023)

Method of &quot;cleaning” the surface of responsive elements of silicon p-i-n photodiodes from dislocations
by: M. S. Kukurudziak
Published: (2023)

Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
by: Dobrovolskyi, Yu., et al.
Published: (2014)

Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
by: Yu. Dobrovolskyi, et al.
Published: (2014)

High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm
by: M. S. Kukurudziak, et al.
Published: (2020)

Spectral photosensitivity of diffused Ge-p–i–n photodiods
by: A. V. Fedorenko
Published: (2020)

Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions
by: Hodovaniouk, V.M., et al.
Published: (2005)

Peculiarities of manufacture, electrical and photoelectrical properties of diffusion Gep-i-n- photodiodes
by: V. P. Maslov, et al.
Published: (2018)

Study on the formation of current characteristics of a silicon photodiode with rectifying barriers
by: A. V. Karimov, et al.
Published: (2013)

Проблеми хіміко-динамічного полірування в технології кремнієвих p-i-n фотодіодів
by: Kukurudziak, M. S.
Published: (2023)

The prospects of use of silicon photodiodes for registration alpha, beta radiation and neutrons
by: Voronkin, E.F., et al.
Published: (2016)

Метод «очищення» поверхні фоточутливих елементів кремнієвих p-i-n фотодіодів від дислокацій
by: Kukurudziak, M. S.
Published: (2023)

InSb Photodiodes (Review, Part I)
by: A. V. Sukach, et al.
Published: (2016)

Кремнієвий p–i–n-фотодіод із підвищеною імпульсною чутливістю
by: Kukurudziak, Mykola, et al.
Published: (2021)

Combined detectors of charged particles based on zinc selenide scintillators and silicon photodiodes
by: Ryzhikov, V.D., et al.
Published: (2001)

Investigation High Sensitive Photo Detector Device Based on the Avalanche Photodiode for Optoelectronic Measuring Systems
by: I. A. Braginets, et al.
Published: (2016)

Current-voltage characteristics of the injection photodiode based on M(In)-nCdS-pSi-M(In) structure
by: I. B. Sapaev, et al.
Published: (2019)

Influence of the photodiode spectral sensitivity on the temperature estimation by sxr using thin filtering foils in Uragan-3M
by: Dreval, M.B., et al.
Published: (2020)

InAs photodiodes (review)
by: A. V. Sukach, et al.
Published: (2015)

A new approach to increasing the sensitivity of a gas sensor based on nanocrystalline silicon carbide films
by: A. Semenov, et al.
Published: (2021)

Heterostructure infrared photodiodes
by: Rogalski, A.
Published: (2000)

Modeling of thermal processes ohigh-frequency silicon p-i-n-diode
by: A. V. Karimov, et al.
Published: (2014)

Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width
by: Emad Hameed Hussein
Published: (2009)

Negative photoconductivity and surface-barrier photodiode effect – two interrelated sur-face photoeffects in macroporous silicon
by: N. I. Karas
Published: (2014)

Increase of sensitivity of acoustic technique of NDT of materials
by: M. O. Karpash
Published: (2011)

Negative magnetoresistance of heavily doped silicon p-n junction
by: V. L. Borblik, et al.
Published: (2011)

Negative magnetoresistance of heavily doped silicon p-n junction
by: Borblik, V.L., et al.
Published: (2011)

Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon
by: Gorban, A.P., et al.
Published: (2000)

Investigation of the modulation processes of the base area of the silicon p+p-n+-structure
by: D. M. Jodgorova, et al.
Published: (2013)

Thermostabilized photodiode for monitoring radiation of medical lasers
by: Dobrovolsky, Yu., et al.
Published: (2015)

Thermostabilized photodiode for monitoring radiation of medical lasers
by: Yu. Dobrovolsky, et al.
Published: (2015)

InAs photodiodes (Review. Part IV)
by: A. V. Sukach, et al.
Published: (2018)

Shunt current in InAs diffused photodiodes
by: A. V. Sukach, et al.
Published: (2020)

Shunt current in InAs diffused photodiodes
by: Sukach, A.V., et al.
Published: (2020)

Modelling silicon solar element with p–n vertical shift
by: A. B. Gnilenko, et al.
Published: (2013)

Increasing sensitivity of sensors based on surface plasmon resonance
by: T. S. Lebiedieva, et al.
Published: (2016)

Spin-dependent current in silicon p-n junction diodes
by: Tretyak, O.V., et al.
Published: (2010)

Spin-dependent current in silicon p-n junction diodes
by: O. V. Tretyak, et al.
Published: (2010)

InSb Photodiodes (Review, Part II)
by: A. V. Sukach, et al.
Published: (2016)

New phoswich detector based on LFS and p-terphenyl scintillators coupled to micro pixel avalanche photodiode
by: Ahmadov, F., et al.
Published: (2017)