Calculation of the ground-state ionization energy for shallow donors in n-Ge single crystals within the Δ1-model for the conduction band

Calculation of the ground-state ionization energy for shallow donors in n-Ge single crystals within the Δ1-model for the conduction band

Gespeichert in:

Bibliographische Detailangaben
Datum:	2015
Hauptverfasser:	S. V. Lunov, O. V. Burban, P. F. Nazarchuk
Format:	Artikel
Sprache:	English
Veröffentlicht:	2015
Schriftenreihe:	Ukrainian Journal of Physics
Online Zugang:	http://jnas.nbuv.gov.ua/article/UJRN-0000730574
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Ähnliche Einträge

Calculation of the ground-state ionization energy for shallow donors in n-Ge single crystals within the Δ1-model for the conduction band
von: S. V. Luniov, et al.
Veröffentlicht: (2015)

Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors
von: Glinchuk, K.D., et al.
Veröffentlicht: (2002)

Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide
von: Glinchuk, K.D., et al.
Veröffentlicht: (2003)

Theoretical approach to electrodiffusion of shallow donors in semiconductors: I. Stationary limit
von: Kashirina, N.I., et al.
Veröffentlicht: (1998)

Effect of pre-dimple boundary layer thickness on flow characteristics within and downstream of a single shallow dimple
von: Khalatov, A., et al.
Veröffentlicht: (2006)

Radiation defects parameters determination in n-Ge single crystals irradiated by high-energy electrons
von: S. V. Lunov, et al.
Veröffentlicht: (2016)

Mechanisms of electron scattering in uniaxially deformed n-Ge‹Sb, Au› single crystals
von: Luniov, S.V., et al.
Veröffentlicht: (2019)

Determination of the activation energy of A-center in the uniaxially deformed n-Ge single crystals
von: S. V. Lunov, et al.
Veröffentlicht: (2017)

Non-linear effects in hopping conduction of single-crystal La₂CuO₄₊δ
von: Belevtsev, B.I., et al.
Veröffentlicht: (1998)

The method of shear modulus determination for n-Ge and n-Si single crystals
von: V. I. Shvabiuk, et al.
Veröffentlicht: (2017)

Effect of electron irradiation on excess conductivity of single Y₁Ba₂Cu₃O₇₋δ crystals
von: Azarenkov, N.A., et al.
Veröffentlicht: (2018)

IMPROVED ALGORITHM FOR CALCULATING COMPLEX NON-EQUIPOTENTIAL GROUNDING DEVICES OF ELECTRICAL INSTALLATIONS TAKING INTO ACCOUNT CONDUCTIVITY OF NATURAL GROUNDINGS
von: Starkov, K. A., et al.
Veröffentlicht: (2017)

Effect of longitudinal magnetic field on the excess conductivity of monodomain YBa₂Cu₃O₇-δ single crystals
von: Tiutierieva, K.V., et al.
Veröffentlicht: (2016)

Розрахунок енергiї iонiзацiї основного стану мiлких донорiв в Δ1-моделi зони провiдностi монокристалiв n-Ge
von: Luniov, S. V., et al.
Veröffentlicht: (2019)

Effect of electron irradiation on the transverse conductivity of YBa2Cu3O7–δ single crystal
von: Ja. Khadzhaj, et al.
Veröffentlicht: (2019)

Effect of oxygen deficit on temperature dependence of excess conductivity in Y₁Ba₂Cu₃O₇-δ single crystals
von: Bondarenko, A.V., et al.
Veröffentlicht: (2006)

Experimental Ka-Band Ground-Based Sar System
von: A. A. Bezvesilnyj, et al.
Veröffentlicht: (2015)

EXPERIMENTAL KA-BAND GROUND-BASED SAR SYSTEM
von: Bezvesilniy, O. O., et al.
Veröffentlicht: (2015)

Experimental Ka-Band Ground-Based SAR System
von: Bezvesilniy, O.O., et al.
Veröffentlicht: (2015)

Features of radiation-defect annealing in n-Ge single crystals irradiated with high-energy electrons
von: S. V. Lunov, et al.
Veröffentlicht: (2019)

Peculiarities of valence band formation in As-Ge-Se semiconductor glasses
von: M. Vakiv, et al.
Veröffentlicht: (2012)

Peculiarities of valence band formation in As-Ge-Se semiconductor glasses
von: Vakiv, M., et al.
Veröffentlicht: (2012)

Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods
von: O. Churiukova, et al.
Veröffentlicht: (2015)

Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods
von: Churiukova, O., et al.
Veröffentlicht: (2015)

Electric field ionization of boron acceptors in single-crystalline diamond
von: I. V. Altukhov, et al.
Veröffentlicht: (2021)

Frustration phenomena in Josephson point contacts between single-band and three-band superconductors
von: Y. S. Yerin, et al.
Veröffentlicht: (2014)

Frustration phenomena in Josephson point contacts between single-band and three-band superconductors
von: Yerin, Y.S, et al.
Veröffentlicht: (2014)

Specific features of the thermoluminescence kinetics of shallow traps in anion-defective single crystals of aluminum oxide
von: Kortov, V.S., et al.
Veröffentlicht: (2005)

The mixed-state Hall conductivity of single-crystal films Nd₂–xCexCuO₄₊δ (x = 0.14)
von: Shelushinina, N.G., et al.
Veröffentlicht: (2017)

RESEARCH ON ELECTRIC POTENTIALS ALIGNMENT ON THE GROUND SURFACE WITHIN THE GROUNDING CONDUCTOR TERRITORY
von: Nizhevskyi, V. I., et al.
Veröffentlicht: (2014)

Josephson systems based on ballistic point contacts between single-band and multi-band superconductors
von: Ju. S. Erin, et al.
Veröffentlicht: (2015)

Single-molecule electronic materials. Conductance of π-conjugated oligomers within quasi-correlated tight-binding model
von: Luzanov, A.V.
Veröffentlicht: (2019)

Excess conductivity and pseudogap state in YBa₂Cu₃-yAlyO₇₋δ single crystals with a system of undirectional twin boundaries
von: Vovk, R.V., et al.
Veröffentlicht: (2007)

Evolution of over-conductivity of YВа₂Сu₃О₇-δ single crystals under the exposure of irradiation by high-energy electrons
von: Azarenkov, N.A., et al.
Veröffentlicht: (2020)

On Creep and Damageability of Shallow Shells
von: S. N. Sklepus
Veröffentlicht: (2018)

Electronic band structure and magnetic susceptibility of Ge₁₋xSix solid solutions
von: Deibuk, V.G., et al.
Veröffentlicht: (2002)

INVESTIGATION AND CALCULATION OF VALLEYS OF OUTGOING FROM SUBSTATION GROUNDING CONDUCTORS FOR SHORT-CIRCUIT IN SINGLE-PHASE SHORT OF ELECTRICAL GRID
von: Nizhevskyi, V. I., et al.
Veröffentlicht: (2015)

The mixed-state Hall conductivity of single-crystal films Nd2–xCexCuO4+δ (x = 0.14)
von: N. G. Shelushinina, et al.
Veröffentlicht: (2017)

Effect of high pressure on conductivity in the basal plane of Y₁₋xPrxBa₂Cu₃O₇₋δ single crystals lightly doped of praseodymium
von: Khadzhai, G.Ya., et al.
Veröffentlicht: (2014)

Linear field dependencies of conductivity and phonon-induced conductivity of 2D gas in δ-doped GaAs
von: Slutskii, M.I.
Veröffentlicht: (2004)