Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation
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| Date: | 2015 |
|---|---|
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
2015
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| Series: | Optoelectronics and Semiconductor Technique |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0001061482 |
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| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859527629228474368 |
|---|---|
| author | P. I. Baranskyi H. P. Haidar |
| author_facet | P. I. Baranskyi H. P. Haidar |
| author_sort | P. I. Baranskyi |
| collection | Open-Science |
| first_indexed | 2025-07-22T05:55:37Z |
| format | Article |
| id | open-sciencenbuvgovua-68455 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T05:55:37Z |
| publishDate | 2015 |
| record_format | dspace |
| series | Optoelectronics and Semiconductor Technique |
| spelling | open-sciencenbuvgovua-684552024-04-16T13:34:19Z Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation P. I. Baranskyi H. P. Haidar 2707-6806 2015 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0001061482 Article |
| spellingShingle | Optoelectronics and Semiconductor Technique P. I. Baranskyi H. P. Haidar Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation |
| title | Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation |
| title_full | Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation |
| title_fullStr | Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation |
| title_full_unstemmed | Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation |
| title_short | Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation |
| title_sort | comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0001061482 |
| work_keys_str_mv | AT pibaranskyi comparisonoftheelectrophysicalpropertiesofsiliconcrystalsdopedwithphosphorusthroughthemeltandbyusingthemethodofnucleartransmutation AT hphaidar comparisonoftheelectrophysicalpropertiesofsiliconcrystalsdopedwithphosphorusthroughthemeltandbyusingthemethodofnucleartransmutation |