Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation
Збережено в:
| Дата: | 2015 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2015
|
| Назва видання: | Optoelectronics and Semiconductor Technique |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0001061482 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
Репозиторії
Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-68455 |
|---|---|
| record_format |
dspace |
| spelling |
open-sciencenbuvgovua-684552024-04-16T13:34:19Z Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation P. I. Baranskyi H. P. Haidar 2707-6806 2015 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0001061482 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Optoelectronics and Semiconductor Technique |
| spellingShingle |
Optoelectronics and Semiconductor Technique P. I. Baranskyi H. P. Haidar Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation |
| format |
Article |
| author |
P. I. Baranskyi H. P. Haidar |
| author_facet |
P. I. Baranskyi H. P. Haidar |
| author_sort |
P. I. Baranskyi |
| title |
Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation |
| title_short |
Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation |
| title_full |
Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation |
| title_fullStr |
Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation |
| title_full_unstemmed |
Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation |
| title_sort |
comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation |
| publishDate |
2015 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0001061482 |
| work_keys_str_mv |
AT pibaranskyi comparisonoftheelectrophysicalpropertiesofsiliconcrystalsdopedwithphosphorusthroughthemeltandbyusingthemethodofnucleartransmutation AT hphaidar comparisonoftheelectrophysicalpropertiesofsiliconcrystalsdopedwithphosphorusthroughthemeltandbyusingthemethodofnucleartransmutation |
| first_indexed |
2024-04-17T04:57:09Z |
| last_indexed |
2024-04-17T04:57:09Z |
| _version_ |
1796884419073540096 |